NJRC NJL5192K

NJL5190K/92K
GENERAL PURPOSE PHOTO REFLECTOR
■ GENERAL DESCRIPTION
The NJL5190K/5192K are the single-in-line super miniature and super thin general purpose photo reflectors,
which consist of high output infrared emitting and high sensitive Si photo transistor, and attain high
cost performance.
■ FEATURES
• Super miniature, super thin type
• Built-in visible light cut-off filter.
• High output, high S/N ratio.
■ APPLICATIONS
• End detector of video, audio tape.
• Rotation detection and control of various motors, audio turntables.
• Paper edge detection and mechanism timing detection of facsimile printer, X-Y recorder.
• Reading film information and mechanism timing detection of camera.
• Reading out the characters of bar code reader, encoder and the automatic vending machine.
• Various detection of industrial system, such as FDD, Robot.
■ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Emitter
Forward Current (Continuous)
IF
Reverse Voltage (Continuous)
VR
Power Dissipation
PD
Detector
Collector-Emitter Voltage
VCEO
Emitter-Collector Voltage
VECO
Collector Current
IC
Collector Power Dissipation
PC
Coupled
Total Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
Ptot
Topr
Tstg
Tsol
RATINGS
UNIT
30
6
45
mA
V
mW
16
6
10
25
V
V
mA
mW
60
-20 ~ +85
-30 ~ +85
260(10sec. 1.5mm from body)
mW
°C
°C
°C
■ ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Dark Current
Collector-Emitter Voltage
Coupled
Output Current
Operating Dark Current
Rise Time
Fall Time
SYMBOL
TEST CONDITION
MIN
TYP
TYP
UNIT
V
µA
pF
VF
IR
Ct
IF=4mA
VR=6V
VR=0V,f=1MHz
—
—
—
—
—
25
1.4
10
ICEO
VCEO
VCE=10V
IC=100µA
—
16
—
—
0.2
IO
ICEOD
tr
tf
IF=4mA,VCE=2V,d=0.7mm
IF=4mA,VCE=2V
IO=100µA,VCE=2V,RL=1KΩ,d=0.7mm
IO=100µA,VCE=2V,RL=1KΩ,d=0.7mm
50
—
—
30
30
150
0.2
—
—
—
—
—
—
—
µA
V
µA
µA
µS
µS
-1-
NJL5190K/92K
■ OUTLINE (typ.) Unit : mm
C
C
0.
4.4
0.
1.65
4.4
7
7
0.8
① cathode
② anode
2.6
2.6
① cathode
② anode
0.5
0.85
collector
③ emitter
③ emitter
0.2
3.4
1.78 1.78
②
0.5
3.8 min.
①
0.8
1.65
0.4
0.8
0.85
5 m in.
0.7
collector
③
0.4
0.2
1.78 1.78
①
NJL5190K
②
③
NJL5190K-F
C
C
0.
4.4
0.
1.65
4.4
7
7
0.8
① emitter
② collector
2.6
2.6
① emitter
② collector
0.5
0.8
③
③ anode
0.2
3.4
①
②
0.5
3.8 min.
1.78 1.78
③
0.4
1.78 1.78
①
NJL5192K
-2-
②
NJL5192K-F
③
0.8
1.65
0.4
0.85
cathode
anode
0.85
5 m in.
0.7
cathode
0.2
NJL5190K/92K
■ MEASURING SPECIFICATION FOR OUTPUT CURRENT
The output current can be measured when reflected at the aluminum
0.7mm
0.7mm
Aluminum
Evaporation
Surface
Aluminum
Evaporation
Surface
IF
IO
IF
IO
V CE
V CE
NJL5190K
NJL5192K
■ MEASURING CIRCUIT FOR OPERATING DARK CURRENT
Light Sealed Dark Box
Light Sealed Dark Box
I CEOD
IF
I CEOD
IF
VCE
VCE
NJL5190K
NJL5192K
■ MEASURING SPECIFICATION FOR EDGE RESPONSE
Aluminum Evaporation Surface
Edge
l
d=0.7mm
Lead
-3-
NJL5190K/92K
■ MEASURING CIRCUIT FOR RESPONSE TIME
0.7mm
Aluminum
Evaporation
Surface
tw
V+
IO
IF
RD
Input
90%
RL
P.G.
OSC
10%
Output
tr
NJL5190K
0.7mm
Aluminum
Evaporation
Surface
RD
V+
IO
IF
RL
P.G.
OSC
NJL5192K
■ MAXIMUM RATING CURVES
Power Dissipation vs. Temperature
Forward Current vs. Temperature
50
50
Total Power
Dissipation
Collector Power
Dissipation
0
40
30
20
10
0
0
20
40
60
80
100
Ambient Temperature Ta(℃)
-4-
Forward Current IF(mA)
Power Dissipation P(mW)
100
0
20
40
60
80
100
Ambient Temperature Ta(℃)
tf
NJL5190K/92K
■ TYPICAL CHARACTERISTICS
Forward Current vs. Forward Voltage
Forward Voltage vs. Temperature
1.6
Forward Voltage VF (V)
Forward Current IF (mA)
100
10
1
IF=30mA
1.2
IF=4mA
1
0.8
-40 -20
1
0
1.4
2
20
40
60 80 100
Ambient Temperature Ta (ºC)
Forward Voltage VF (V)
Dark Current vs. Temperature
Operating Dark Current vs. Temperature
1000
10000
Operating Currnt Iceod (A)
1000
100
10
1
0.1
100
10
1
0.01
IF=4mA,Vce=2V
Vce=10V
0.001
-40
-20
0
20
40
60
80
0.1
-40
100
-20
Ambient Temperature Ta (ºC)
250
200
150
100
Vce=2V,d=0.7mm
50
0
2
4
6
8
Forward Current IF (mA)
20
40
60
80
100
Output Current vs. Temperature
Relative Output Current Io/Io(25ºC) (%)
300
0
0
Ambient Temperature Ta (ºC)
Output Current vs. Forward Current (Ta=25°C)
Output Current Io (µA)
Dark Current Iceo (nA)
0
10
120
100
80
60
IF=4mA,VCE=2V
40
20
0
-40
-20
0
20
40
60
80
100
Ambient Temperature Ta (ºC)
-5-
NJL5190K/92K
Output Characteristics (Ta=25°C)
Vce Saturation (Ta=25°C)
Collector-Emitter Voltage Vce (V)
400
IF=10mA
Output Current Io (µA)
350
300
IF=8mA
250
IF=6mA
200
150
IF=4mA
100
IF=2mA
50
0
0
1
2
3
4
0.3
Io=200µA
Io=150µA
0.2
Io=100µA
Io=70µA
Io=50µA
Io=30µA
0.1
Io=10µA
0
5
0.1
Collector-Emitter Voltage Vce (V)
10
Forward Current IF (mA)
Output Current vs. Distance (Ta=25°C)
Output Current vs. Edge Distance (Ta=25°C)
120%
120%
Vce=2V,IF=4mA
Vce=2V,IF=4mA,d=0.7mm
100%
Relative Output Current Io/Io(max.)
Relative Output Current Io/Io(max.)
1
80%
60%
40%
20%
100%
80%
60%
40%
20%
0%
0
1
2
3
4
0%
5
-1 -0.8 -0.6 -0.4 -0.2
Reflector Distance　d　(mm)
Spectral Response (Ta=25°C)
0.2 0.4 0.6 0.8
1
Switching Time vs. Load Resistance (Ta=25°C)
1000
120
100
Switching Time t (µS)
Relative Response (%)
0
Edge Distance l (mm)
80
60
Vce=2V
40
tr
tf
100
td
10
20
Vce=2V,Io=100µA
0
500 600 700
1
800 900 1000
Wavelength λ (nm)
-6-
0.1
1
Load Resistance RL (K Ω )
10
NJL5190K/92K
PRECAUTION FOR HANDLING
1. Soldering
1) Avoid the reflow method and solder to touch the body of the device during wave soldering. This is to prevent
changes in optical characteristics of the device.
2) Recommended in Soldering
Temperature
Time Lead
Soldering Position
260°C maximum
less than 10 seconds
At least 1.5mm from body
3) Soldering is recommended to be done in as short period of the time as possible by controlling the
temperature of the soldering iron or by the iron of less than 15 watts.
4) The resin gets softened right after soldered, so, the following care has to be taken.
- Not to contact the lens surface to anything
- Not to dip the device into water or any solvents
5) It is recommended not to solder when the leads or between the lead get pulled, depressed or twisted.
6) In the case of using rosin flux, be careful to avoid contact with the lens surface. If the lens is covered with
the flux, the specified characteristics cannot be achieved.
2. Post Solder Cleaning
1) Organic solvents for flux removal like trichloroethlene, acetone, thinner etc, might attach the lens surface.
It is preferable to use less reactive solvents, Methyl Alcohol, Isopropyle Alcohol.
2) Cleaning Operation
Cleaning Solvent Temperature : 35°C maximum
Dipping Time
: 3 minute maximum
3. Attention in handling
1) Treat not to touch the lens surface.
2) Avoid dust and any other foreign materials(flux, paints, bonding material, etc.) on the lens surface.
3) Never to apply reverse voltage(VEC) of more than 6V on the photo transistor when measuring the
characteristics or adjusting the system. If applied, it causes to lower the sensitivity.
4) When mounting, special care has to be taken on the mounting position and tilting of the device because it is
very important to place the device to the optimum position to the object.
4. Storage
The leads are silver plated and they are discolored if the device is left open to the air for long after taken out
of the envelop. It causes deterioration of soldering characteristics. Mount the device as short as possible after
opening the envelope.
-7-
NJL5190K/92K
MEMO
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.