SM5022 series Crystal Oscillator Module ICs NIPPON PRECISION CIRCUITS INC. OVERVIEW accurate thin-film feedback resistors and high-frequency capacitors are built-in, eliminating the need for external components to make a stable fundamental-harmonic oscillator. ry The SM5022 series are crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS, that incorporate high-frequency, low current consumption oscillator and output buffer circuits. Highly FEATURES ■ ■ Output three-state function 2.7 to 5.5 V supply voltage (A× series) 4.5 to 5.5 V supply voltage (B× series) Oscillator frequency output (fO, fO/2, fO/4, fO/8 determined by internal connection) 6-pin SOT (SM5022××H) Chip form (CF5022××) ■ ■ pre lim ina ■ Up to 30MHz operation Fundamental oscillation Capacitors CG, CD built-in Inverter amplifier feedback resistor built-in TTL input level 4 mA (VDD = 2.7 V) drive capability 8 mA (VDD = 4.5 V) drive capability ■ ■ ■ ■ ■ ■ SERIES CONFIGURATION Supply voltag e Version 1 Recommended operating frequency rang e (MHz) Built-in capacitance (pF) gm ratio Rf (k Ω) Output frequency Output level S t a n d by output state Chip SOT 3V 5V CG CD SM5022A1H 2.7 to 5.5 2.7 to 5.5 4 to 24 4 to 30 8 10 1 600 fo CMOS High impedance SM5022A2H 2.7 to 5.5 2.7 to 5.5 4 to 24 4 to 30 – – 1 600 fo CMOS High impedance SM5022A3H 2.7 to 5.5 2.7 to 5.5 4 to 30 4 to 30 8 10 1 600 fo/2 CMOS High impedance SM5022A4H 2.7 to 5.5 2.7 to 5.5 4 to 30 4 to 30 – – 1 600 fo/2 CMOS High impedance SM5022A5H 2.7 to 5.5 2.7 to 5.5 4 to 30 4 to 30 8 10 1 600 fo/4 CMOS High impedance SM5022A7H 2.7 to 5.5 2.7 to 5.5 4 to 30 4 to 30 8 10 1 600 fo/8 CMOS High impedance SM5022B1H 4.5 to 5.5 4.5 to 5.5 × 4 to 30 8 10 1 600 fo TTL High impedance 1. Chip form devices have designation CF5022 ××. ORDERING INFORMATION D e vice P ackag e S M 5 0 2 2 ××H 6-pin SOT C F 5 0 2 2 ××–2 Chip form NIPPON PRECISION CIRCUITS—1 SM5022 series PACKAGE DIMENSIONS (UNIT : mm) 0.45 ± 0.15 ina ry • 6-pin SOT + 0.2 2.8 − 0.3 + 0.2 1.6 − 0.1 2.9 ± 0.2 + 0.1 lim 0.95 0 to 0.15 1.9 ± 0.2 1.1 ± 0.1 0.15 − 0.05 0.1 0.12 M pre 0.4 ± 0.1 NIPPON PRECISION CIRCUITS—2 SM5022 series PAD LAYOUT PINOUT (Unit : µm) (Top View) XT (1000,800) HA5022 ina ry Q VDD 6 XT 2 5 VDD 3 4 Q 1 XT VSS 2 INH (0,0) VSS XT INH Chip size: 1.00 × 0.80 mm Chip thickness: 220 ± 30 µm Chip base: V D D level PIN DESCRIPTION and PAD DIMENSIONS P ad dimensions [µm] Number Name I/O 1 INH I Output state control input. High impedance when LOW . Pull-up resistor built in 2 XT I Amplifier input. 3 VSS – 4 Q O 5 VDD – X Y 834 217 637 217 Ground 165 165 Output. Output frequency (f O , fO /2, fO /4, fO /8) determined by internal connection Supply voltage 162 637 859 450 804 604 lim 6 Description XT O Amplifier output. Cr ystal oscillator connection pins. Cr ystal oscillator connected between XT and X T Cr ystal oscillator connection pins. Cr ystal oscillator connected between XT and X T BLOCK DIAGRAM pre VDD VSS XT CG XT Rf CD 1/2 1/2 1/2 Q INH (INH : Low active) NIPPON PRECISION CIRCUITS—3 SM5022 series SPECIFICATIONS Absolute Maximum Ratings VSS = 0 V Symbol Supply voltage range VDD Input voltage range V IN Output voltage range VOUT Operating temperature range T opr Storage temperature range T stg Output current IO U T Pow er dissipation PD Condition Rating Unit −0.5 to 7.0 V −0.5 to V D D + 0.5 V −0.5 to V D D + 0.5 V −40 to 85 °C ina ry P arameter Chip form −65 to 150 6-pin SOT −55 to 125 6-pin SOT °C 13 mA 250 mW Recommended Operating Conditions VSS = 0 V, f ≤ 30MHz, CL ≤ 15pF Rating P arameter Input voltage Condition typ max 2.7 – 5.5 V V IN VSS – VDD V TO P R −20 – 80 °C VDD Operating temperature Unit min lim Supply voltage Symbol pre Note: Recommended operating conditions will change in accordance with operating frequency, load capacitance, or pow er dissipation. NIPPON PRECISION CIRCUITS—4 SM5022 series Electrical Characteristics 3 V operation: A× series VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Rating Symbol Condition Unit min typ max ina ry P arameter HIGH-level output voltage VOH Q: Measurement cct 1, V D D = 2.7 V, IO H = 4 m A 2.1 2.4 – V L O W -level output voltage VOL Q: Measurement cct 2, V D D = 2.7 V, IO L = 4 m A – 0.3 0.4 V Q: Measurement cct 2, V D D = 3.6 V, I N H = L O W , V O H = V D D – – 10 Q: Measurement cct 2, V D D = 3.6 V, I N H = L O W , V O L = V S S – – 10 2.0 – – V – – 0.5 V Output leakage current IZ µA HIGH-level input voltage V IH INH L O W -level input voltage V IL INH Current consumption ID D I N H = open, Measurement cct 3, load cct 1, C L = 15 p F, 30 MHz cr ystal oscillator – 4 7 mA I N H pull-up resistance RUP Measurement cct 4 25 100 250 kΩ Feedback resistance Rf Measurement cct 5 200 600 1000 kΩ 7.44 8 8.56 pF 9.3 10 10.7 pF CG Built-in capacitance CD Design value, determined by the internal wafer pattern CF5022A1 CF5022A3 CF5022A5 CF5022A7 lim 5 V operation: A× series/ B× series SM5022A1H, SM5022A3H, SM5022A5H, SM5022A7H, VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. P arameter Symbol Rating Condition Unit min typ max HIGH-level output voltage VOH Q: Measurement cct 1, V D D = 4.5 V, IO H = 8 m A 3.9 4.2 – V L O W -level output voltage VOL Q: Measurement cct 2, V D D = 4.5 V, IO L = 8 m A – 0.3 0.4 V Q: Measurement cct 2, V D D = 5.5 V, I N H = L O W , V O H = V D D – – 10 Q: Measurement cct 2, V D D = 5.5 V, I N H = L O W , V O L = V S S – – 10 Output leakage current IZ µA V IH INH 2.0 – – V L O W -level input voltage V IL INH – – 0.8 V – 7 12 pre HIGH-level input voltage I N H = open, Measurement cct 3, load cct 1, C L = 15 p F, 30 MHz cr ystal oscillator Current consumption ID D I N H = open, Measurement cct 3, load cct 2, C L = 15 p F, 30 MHz cr ystal oscillator S M 5 0 2 2 A ×H, CF5022A × mA S M 5 0 2 2 B ×H, CF5022B × – 7 12 I N H pull-up resistance RUP Measurement cct 4 25 100 250 kΩ Feedback resistance Rf Measurement cct 5 200 600 1000 kΩ 7.44 8 8.56 pF 9.3 10 10.7 pF CG Built-in capacitance CD Design value, determined by the internal wafer pattern SM5022A1H, SM5022A3H, SM5022A5H, SM5022A7H, SM5022B1H, CF5022A1 CF5022A3 CF5022A5 CF5022A7 CF5022B1 NIPPON PRECISION CIRCUITS—5 SM5022 series Switching Characteristics CMOS (A× series) 3 V operation VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Symbol Output rise time Output fall time Output duty cycle 1 Condition min typ max Unit Measurement cct 6, load cct 1, C L = 15 p F 0.2V D D to 0.8V D D – 5 10 tr1 0.1V D D to 0.9V D D – 10 20 Measurement cct 6, load cct 1, C L = 15 p F 0.8V D D to 0.2V D D – 5 10 tf1 0.9V D D to 0.1V D D – 10 20 45 – 55 % – – 100 ns – – 100 ns Duty Output disable delay time 2 tP L Z time 2 tP Z L Output enable delay ina ry Rating P arameter Measurement cct 6, load cct 1, Ta = 25 °C , V D D = 3 V, C L = 15 p F, f = 3 0 M H z Measurement cct 7, load cct 1, Ta = 25 °C , V D D = 3 V, C L = 15 p F ns ns 1. Determined by the lot monitor. 2. Oscillator stop function is built-in. W h e n I N H goes LOW , normal output stops. W h e n I N H goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. 5 V operation P arameter Output rise time Output fall time Output duty cycle 1 lim VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Symbol Unit min typ max tr2 Measurement cct 6, load cct 1, 0.1V D D to 0.9V D D , C L = 15 p F – 3.5 7 ns tf2 Measurement cct 6, load cct 1, 0.9V D D to 0.1V D D , C L = 15 p F – 3.5 7 ns Measurement cct 6, load cct 1, Ta = 25 °C , V D D = 5 V, C L = 15 p F, f = 30 M H z 45 – 55 % – – 100 ns – – 100 ns Duty Output disable delay time 2 tP L Z time 2 tP Z L Output enable delay Rating Condition Measurement cct 7, load cct 1, Ta = 25 °C , V D D = 5 V, C L = 15 p F pre 1. Determined by the lot monitor. 2. Oscillator stop function is built-in. W h e n I N H goes LOW , normal output stops. W h e n I N H goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. NIPPON PRECISION CIRCUITS—6 SM5022 series TTL (B× series) 5 V operation VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Rating P arameter Symbol Condition Unit typ max ina ry min Output rise time tr3 Measurement cct 6, load cct 2, 0.4V to 2.4V, C L = 15 p F – 2.5 7 ns Output fall time tf3 Measurement cct 6, load cct 2, 2.4V to 0.4V, C L = 15 p F – 2.5 7 ns Measurement cct 6, load cct 2, Ta = 25 °C , V D D = 5 V, C L = 15 p F, f = 30 M H z 45 – 55 % – – 100 ns – – 100 ns Output duty cycle 1 Duty Output disable delay time 2 tP L Z time 2 tP Z L Output enable delay Measurement cct 7, load cct 2, Ta = 25 °C , V D D = 5 V, C L = 15 p F 1. Determined by the lot monitor. 2. Oscillator stop function is built-in. W h e n I N H goes LOW , normal output stops. W h e n I N H goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. Current consumption and Output waveform with NPC’s standard crystal L f (MHz) R (Ω) L (mH) Ca (fF) Cb (pF) 30 18.62 16.24 1.733 5.337 lim Cb Ca R FUNCTIONAL DESCRIPTION Standby Function When INH goes LOW, the oscillator output on Q goes high impedance. INH HIGH (or open) Oscillator A n y fO , fO /2, fO /4, or f O /8 output frequency Nor mal operation High impedance Stopped pre LOW Q NIPPON PRECISION CIRCUITS—7 SM5022 series MEASUREMENT CIRCUITS Measurement cct 4 Measurement cct 1 5.0V VDD VDD RUP = C1 Signal Generator XT Q INH VSS R2 VSS ina ry R1 VDD IPR IPR A VOH Q out monitor 0V 2.0V P −P , 10MHz sine wave input signal (3V operation) 3.5V P −P , 10MHz sine wave input signal (5V operation) C1 : 0.001µF R1 : 50Ω R2 : 525Ω (3V operation) 490Ω (5V operation) Measurement cct 2 Measurement cct 5 XT VDD VDD IRf Rf = XT IOL, IZ VDD IZ lim A Q INH VSS VSS A IRf V VOL Measurement cct 6 CG VDD XT Measurement cct 3 CD X'tal Q XT VSS pre IDD VDD C1 Signal Generator XT Q R1 C G ,C D : 10pF (5022A2, 5022A4) VSS 2.0V P −P , 30MHz sine wave input signal (3V operation) 3.5V P −P , 30MHz sine wave input signal (5V operation) C1 : 0.001µF R1 : 50Ω Measurement cct 7 VDD Signal Generator XT Q R1 VSS INH R1 : 50Ω NIPPON PRECISION CIRCUITS—8 SM5022 series Load cct 1 Load cct 2 Q output R CL (Including probe capacity) Q output CL C L = 15pF ina ry (Including proove capacity) C L = 15pF R = 800Ω Switching Time Measurement Waveform Output duty level (CMOS) Q output 0.9VDD 0.1VDD 0.9VDD 0.1VDD DUTY measuring voltage (0.5V DD) TW tr lim Output duty level (TTL) tf Q output 2.4V 2.4V 0.4V 0.4V DUTY measuring voltage (1.4V ) TW tr tf pre Output duty cycle (CMOS) DUTY measuring voltage (0.5V DD) Q output TW T DUTY= TW/ T 100 (%) Output duty cycle (TTL) DUTY measuring voltage (1.4V ) Q output TW T DUTY= TW/ T 100 (%) NIPPON PRECISION CIRCUITS—9 SM5022 series INH ina ry Output Enable/Disable Delay VIH VIL tPZL tPLZ Q output 10ns pre lim INH inputwaveform tr = tf NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility fo r the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification. The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter, including compliance with expor t controls on the distribution or dissemination of the products. Customers shall not expor t, directly or indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies. NIPPON PRECISION CIRCUITS INC. NIPPON PRECISION CIRCUITS INC. 4-3, Fukuzumi 2-chome Koto-ku, Tokyo 135-8430, Japan Telephone: 03-3642-6661 Facsimile: 03-3642-6698 NP9906AE 1999.06 NIPPON PRECISION CIRCUITS—10