NTE107 Silicon NPN Transistor UHF Oscillator for Tuner Description: The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Lead temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL . . . . . . . . . . . . . . . +260°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA 30 – – V Collector–Emitter Breakdown Voltage V(BR)CEO ICEO = 3mA, Note 1 12 – – V Emitter–Base Breakdown Voltage 3 – – V V(BR)EBO IE = 100µA Collector Cutoff Current ICBO VCB = 15V, IE = 0 – – 0.5 µA Emitter Cutoff Current IEBO VEB = 2V, IC = 0 – – 0.5 µA Forward Current Transfer Ratio hFE VCE = 10V, IC = 8mA 20 75 – VCE(sat) IC = 10mA, IB = 1mA – – 0.6 Collector Saturation Voltage Note 1. Pulse test: Pulse Width = 1µs, Duty Cycle = 1%. V Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit fT IC = 5mA, VCE = 10V, f = 100MHz 700 – 0.8 – 1.5 pF – 4.0 6.5 dB Dynamic Characteristics Current Gain–Bandwidth Product Output Capacitance Cob VCE = 10V, IE = 0, f = 1MHz Noise Figure NF IC = 1mA, VCB = 6V, f = 60MHz, RG = 400Ω .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max 2100 MHz