NTE16002 Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 40 – – V IE = 0.25mA, IC = 0 4 – – V ICEO VCE = 30V, IB = 0 – – 0.25 mA ICEX VCE = 30V, VBE(off) = 1.5V, TC = +200°C – – 10 mA VCE = 65V, VBE(off) = 1.5V – – 5 mA ICBO VCB = 65V, IE = 0 – – 1 mA IEBO VBE = 4V, IC = 0 – – 0.25 mA hFE VCE = 5V, IC = 1A 5 – – OFF Characteristics Collector–Emitter Sustaining Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO(sus) IC = 200mA, IB = 0, Note 1 V(BR)EBO ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 100mA – – 1.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 5A – – 1.5 V VCE = 28V, IC = 150mA, f = 100MHz – 400 – MHz VCB = 30V, IE = 0, f = 100kHz – 16 20 pF Dynamic Characteristics Current Gain–Bandwidth Product Output Capacitance fT Cob Note 1. Pulsed through 25mH inductor. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Power Input Pin VCE = 28V, Pout = 2.5W, f = 175MHz – – 0.25 W Common–Emitter Amplifier Power Gain Gpe 10 – – dB η 50 – – % Functional Tests Collector Efficiency Collector .200 (5.08) Dia Emitter .430 (10.92) Base .340 (8.63) Dia .038 (0.98) Dia .480 (12.19) Max .113 (2.88) 10–32 NF–2A .320 (8.22) Max .078 (1.97) Max .455 (11.58) Max