NTE16004 (PNP) & NTE16005 (NPN) Silicon Complementary Transistors High Current, General Purpose Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.057mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 75 – – V VCE = 100V, VBE = 1.5V – – 0.1 mA VCE = 70V, VBE = 1.5V, TC = +150°C – – 5.0 mA IEBO VBE = 7V, IC = 0 – – 0.1 mA hFE IC = 500mA, VCE = 4V 30 – 130 IC = 1A, VCE = 2V 10 – – IC = 500mA, IB = 50mA – – 0.7 V – – 0.5 V IC = 500mA, VCE = 4V – – 1.1 V IC = 50mA, VCE = 4V, f = 10MHz 5 – – OFF Characteristics Collector–Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO) IC = 100mA, IB = 0 ICEX ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage NTE16004 VCE(sat) NTE16005 Base–Emitter ON Voltage VBE(on) Small–Signal Characteristics Small–Signal Current Gain hfe Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – – 100 ns – – 80 ns – – 1000 ns – – 800 ns Switching Characteristics Turn–On Time NTE16004 ton VCC = 30V, IC = 500mA, IB1 = 50mA NTE16005 Turn–Off Time NTE16004 toff NTE16005 VCC = 30V, IC = 500mA, IB1 = IB2 = 50mA .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)