NTE NTE160

NTE160
Germanium PNP Transistor
RF–IF Amp, FM Mixer OSC
Description:
The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Power Dissipation (TA = +45°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +75°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W max
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750°C/W max
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ICES
VCE = –20V, VBE = 0
–
–
–8
µA
ICEO
VCE = –15V, IB = 0
–
–
–500
µA
Emitter Cutoff Current
IEBO
VEB = –0.3V, IC = 0
–
–
–100
µA
Base–Emitter Voltage
VBE
IC = –2mA, VCE = –10V
–
–350
–
mV
IC = –5mA, VCE = –5V
–
–400
–
mV
IC = –2mA, VCE = –10V
–
50
–
IC = –5mA, VCE = –5V
–
42
–
Collector Cutoff Current
DC Current Gain
hFE
Transition Frequency
fT
IC = –2mA, VCE = –10V, f = 100MHz
–
700
–
MHz
Reverse Capacitance
–Cre
IC = –2mA, VCE = –10V, f = 450kHz
–
0.23
–
pF
Noise Figure
NF
IC = –2mA, VCE = –10V, Rg = 60Ω,
f = 800MHz
–
5
6
dB
Power Gain
Gpb
IC = –2mA, VCE = –10V, RL = 2kΩ,
f = 800MHz
11
14
–
dB
.220 (5.58) Dia Max
.185 (4.7) Dia Max
.190
(4.82)
.030 (.762) Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector
45°
Case
.040 (1.02)