NTE161 Silicon NPN Transistor VHF–UHF Amplifier, Mixer/Osc Features: D High Current Gain–Bandwidth Product: fT = 600MHz (Min) @ f = 100MHz D Low Output Capacitance: Cob = 1.7pF (Max) @ VCB = 10V Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Base Breakdown Voltage V(BR)CBO IC = 1.0µA, IE = 0 30 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 3.0 – – V Collector–Emitter Sustaining Voltage VCEO(sus) IC = 3mA, IB = 0 15 – – V Collector Cutoff Current VCB = 15V, IE = 0 – – 0.01 µA VCB = 15V, IE = 0, TA = +150°C – – 1.0 µA ICBO Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE IC = 3mA, VCE = 1V 20 – – Collector–Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA – – 0.4 V Base–Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 1mA – – 1.0 V 600 – – MHz VCB = 10V, IE = 0, f = 140kHz – – 1.7 pF VCB = 0, IE = 0, f = 140kHz – – 3.0 pF Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance fT IC = 10mA, VCE = 10V, f = 100MHz, Note 1 Cobo Input Capacitance Cibo VEB = 0.5V, IC = 0, f = 140kHz – – 2.0 pF Noise Figure NF IC = 1mA, VCE = 6V, RG = 400Ω, f = 60MHz – – 6.0 dB Amplifier Power Gain Gpe VCB = 12V, IC = 6mA, f = 200MHz 15 – – dB Power Output Po VCB = 15V, IC = 8mA, f = 500MHz 30 – – mW Collector Efficiency η VCB = 15V, IC = 8mA, f = 500MHz 25 – – % Functional Test Note 1. fT is defined as the frequency at which |hfe| extrapolates to unity. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector 45° Case .040 (1.02)