NTE221 MOSFET Dual Gate, N–Channel for VHF TV Receivers Applications Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications. Features: D Extremely Low Feedback Capacitance D High Power Gain Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–to–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +20V Gate 1–to–Source Voltage, VG1S Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1V to –8V Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V to –8V Gate 2–to–Source Voltage, VG2S Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to 40% of VDS Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to +20V Drain–to–Gate Voltage, VDG1 or VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Pulsed Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Transistor Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Lead Temperature (During Soldering, 1/32” from seating surface, 10sec max), TL . . . . . . . . +265°C Note 1. Pulse test: Pulse Width ≤ 20ms, Duty Cycle ≤ 15%. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Gate 1–to–Source Cutoff Voltage VG1S(off) VDS = 15V, VG2S = 4V, ID = 200mA – –2 – V Gate 2–to–Source Cutoff Voltage VG2S(off) VDS = 15V, VG1S = 0, ID = 200mA – –2 – V Gate 1 Leakage Current IG1SS VG1S = 20V, VG2S = 0, VDS = 0 – – 1 nA Gate 2 Leakage Current IG2SS VG2S = 20V, VG1S = 0, VDS = 0 – – 1 nA Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Drain Current Test Conditions IDSS Forward Transconductance gfs Min Typ Max Unit VDS = 13V, VG1S = 0, VG2S = 4V – 18 – mA VDS = 13V, ID = 10mA, VG2S = 4V, f = 1kHz – 1000 – µmhos Performance Characteristics: (TA = +25°C, f = 200MHz, Note 2 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Small–Signal, Short Circuit Reverse Transfer Capacitance Crss (Drain–to–Gate 1) at f = 1MHz – 0.02 0.03 pF Output Capacitance Coss – 2.2 – pF Input Capacitance Ciss – 5.5 – pF Input Resistance riss – 1.2 – kΩ Output Resistance ross – 2.8 – kΩ Magnitude of Forward Transconductance |Yfs| – 11000 – µmhos – –46 – deg – 20 – dB – 20 – dB Phase Angle of Forward Transadmittance Maximum Available Power Gain MAG Maximum Usable Power Gain (Unneutralized) MUGu Note 3 Power Gain GPS – 17.5 – dB Noise Figure NF – – 5 dB Note 2. VG1S is adjusted for ID = 10mA, Gate 2 at AC ground potential, VDS = 13V, VG2S = 4V. Note 3. Limited by practical design considerations. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate 2 Drain Gate 1 45° Source/Case .040 (1.02)