NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings: Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak (tp ≤ 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (tp ≤ 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2°C/W Electrical Charactertistics: (TC = +25°C unless otherwise specified) Parameter Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current Symbol Test Conditions Min Typ Max Unit 400 – – V VCE = 1000V, VBE = 0 – – 1 mA VCE = 1000V, VBE = 0, TC = +125°C – – 3 mA VEB = 9V, IC = 0 – – 10 mA VCEO(sus) IC = 100mA, L = 25mH, Note 1 ICES IEBO Collector–Emitter Saturation Voltage VCE(sat) IC = 6A, IB = 1.2A, Note 1 – – 1.5 V Base–Emitter Saturation Voltage VBE(sat) IC = 6A, IB = 1.2A, Note 1 – – 1.5 V IC = 6A, IB1 = 1.2A, IB2 = 1.2A – – 1 µs Turn–On Time ton Storage Time ts – – 4 µs Fall Time tf – – 0.8 µs Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%. .060 (1.52) .600 (15.24) .173 (4.4) C .156 (3.96) Dia. B C .550 (13.97) .430 (10.92) E .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners