NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCE = 1500V D Collector–Emitter Sustaining Voltage: VCEO(sus) = 700V D Switching Time with Inductive Loads: tf = 0.5µs (Typ) @ IC = 4.5A D Internal Flyback Diode Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +275°C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%. Electrical Characteristics: (TC = +25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 700 – – V VCE = 1500V, VBE = 0 – – 0.1 mA VCE = 1500V, VBE = 0, TC = +125°C – – 2.0 mA VEB = 6V, IC = 0 – – 300 mA OFF Characteristics (Note 1) Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 Collector Cutoff Current Emitter–Base Leakage Current ICES IEBO Electrical Characteristics (Cont’d): (TC = +25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max 2.25 – – Unit ON Characteristics (Note 1) DC Current Gain hFE IC = 4.5A, VCE = 5V Collector–Emitter Saturation Voltage VCE(sat) IC = 4.5A, IB = 2A – – 1 V Base–Emitter Saturation Voltage VBE(sat) IC = 4.5A, IB = 2A – – 1.3 V fT IC = 0.1A, VCE = 5V, f = 1MHz – 7 – MHz Cob VCB = 10V, IE = 0, f = 0.1MHz – 125 – pF IC = 4.5A, IB = 1.8A, LB = 10µH µ – 8.0 – µs – 0.5 – µs Dynamic Characteristics Current–Gain Bandwidth Product Output Capacitance Switching Characteristics Storage Time ts Fall Time tf Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%. .600 (15.24) .060 (1.52) .173 (4.4) C .156 (3.96) Dia. B C .550 (13.97) .430 (10.92) E .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners