NTE NTE2331

NTE2331
Silicon NPN Transistor
Color TV Horizontal Deflection Output
w/Damper Diode
Applications:
D Color TV Horizontal Deflection Output
D Color Display Horizontal Deflection Output
Features:
D High Speed (tf = 100nsec)
D High Breakdown Voltage (VCBO = 1500V)
D High Reliability
D On–Chip Damper Diode
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Collector Sustain Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
ICES
VCE = 1500V
–
–
1.0
mA
ICBO
VCB = 800V
–
–
10
µA
800
–
–
V
VEB = 4V
40
–
130
mA
VCEO(sus) IC = 100mA, IB = 0
Emitter Cutoff Current
IEBO
Saturation Voltage
Collector to Emitter
VCE(sat)
IC = 5A, IB = 1.0A
–
–
5
V
Saturation Voltage
Base to Emitter
VBE(sat)
IC = 5A, IB = 1.0A
–
–
1.5
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
DC Current Gain
Diode Forward Voltage
Fall Time
Symbol
Test Conditions
Min
Typ
Max
Unit
hFE1
VCE = 5V, IC = 1A
8
–
–
hFE2
VCE = 5V, IC = 5A
5
–
10
IEC = 6A
–
–
2
V
IC = 4A, IB1 = 0.8A, IB2 = 1.6A
–
0.1
0.3
µs
VF
tf
.221 (5.6)
.134 (3.4) Dia
.123 (3.1)
.630 (16.0)
.315
(8.0)
.866
(22.0)
B
C
E
.158 (4.0)
.804
(20.4)
.215 (5.45)
.040 (1.0)