NTE NTE2336

NTE2336
Silicon NPN Transistor
Darlington Switch w/Internal Damper
& Zener Diode
Features:
D 60V Zener Diode Built–In Between Collector and Base
D Low Fluctuation in Breakdown Voltages
D High Energy Handling Capability
D High Speed Switching
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Collector Power Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 50V, IE = 0
–
–
100
µA
Emitter Cutoff Current
IEBO
VEB = 7V, IC = 0
–
–
2
mA
Collector–Emitter Voltage
VCEO
IC = 5mA, IB = 0
50
–
70
V
VCE = 3V, IC = 4A
2000
–
5000
VCE = 3V, IC = 8A
500
–
–
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 4A, IB = 8mA
–
–
1.5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 4A, IB = 8mA
–
–
2.0
V
VCE = 10V, IC = 500mA, f = 1MHz
–
20
–
MHz
Transition Frequency
fT
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Turn–On Time
ton
Storage Time
tstg
Fall Time
Test Conditions
VCC = 50V, IC = 4A,
IB1 = 8mA, IB2 = –8mA
tf
Energy Handling Capacity
Es/b
IC = 1A, L = 100mH, RBE = 100Ω
Min
Typ
Max
Unit
–
0.5
–
µs
–
4
–
µs
–
1
–
µs
50
–
–
mJ
C
B
E
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated