NTE2337 Silicon NPN Transistor High Speed Switch Features: D High Collector–Base Voltage (VCBO) D Wide Area of Safety Operation (ASO) D Good Linearity of DC Current Gain (hFE) Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Collector Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Peak Collector Current, ICP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Power Dissipation, PC TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – 100 µA 100 µA V Collector Cutoff Current ICBO VCB = 900V, IE = 0 – Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – Collector Emitter Voltage VCEO IC = 10mA, IB = 0 500 – – DC Current Gain hFE1 VCE = 5V, IC = 0.1A 15 – – hFE2 VCE = 5V, IC = 4A 8 – – Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 0.8A – – 1.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 0.8A – – 1.5 V Transition Frequency fT VCE = 10V, IC = 0.5A, f = 1MHz – 20 – MHz Turn–On Time ton – – 1.0 µs Storage Time tstg IC = 4A, IB1 = 0.8A, IB2 = –1.6A, VCC = 200V – – 3.0 µs – – 0.3 µs Collector Current Fall Time tf .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated