NTE NTE233

NTE233
Silicon NPN Transistor
Video IF, Oscillator
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL . . . . . . . . . . . . . . . +230°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
30
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
3
–
–
V
Collector Cutoff Current
ICBO
VCB = 30V, IE = 0
–
–
50
nA
ICEO
VCE = 30V, IB = 0
–
–
1
µA
hFE
IC = 10mA, VCE = 10V, Note 1
20
–
100
VCE(sat)
IC = 20mA, IB = 0.1mA, Note 1
–
0.6
–
V
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 1mA, IB = 0, Note 1
30
–
–
V
Current Gain–Bandwidth Product
fT
IC = 10mA, VCE = 10V,
f = 100MHz
300
–
700
MHz
Power Gain, Fixed Neutralization
Gpe
IC = 10mA, VCE = 10V,
f = 45MHz
25
–
–
dB
Reverse Transfer Capacitance
Cre
IE = 0, VCB = 10V, f ≤ 1MHz
0.6
–
1.1
pF
Output Admittance, Input Short
Circuit
goe
IC = 10mA, VCE = 10V,
f = 45MHz
30
–
200 µmho
DC Pulse Current Gain
Collector Saturation Voltage
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max