NTE2371 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P–Channel D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19A Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W Note Note Note Note 1. 2. 3. 4. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = +25°C, L = 2.7mH, RG = 25Ω, IAS = 19A ISD ≤ 19A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ +175°C Pules Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Drain–to–Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient ∆V(BR)DSS Reference to +25°C, ID = 1mA ∆TJ VGS = 0V, ID = 250µA Min Typ Max Unit 100 – – V – 0.087 – V/°C – – 0.20 Ω Static Drain–to–Source On–Resistance RDS(on) VGS = 10V, ID = 11A, Note 4 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – 4.0 V VDS = 50V, ID = 11A, Note4 6.2 – – mhos VDS = 100V, VGS = 0V – – 100 µA VDS = 80V, VGS = 0V, TJ = +150°C – – 500 µA Forward Transconductance Drain–to–Source Leakage Current gfs IDSS Gate–to–Source Forward Leakage IGSS VGS = –20V – – –100 nA Gate–to–Source Reverse Leakage IGSS VGS = 20V – – 100 nA ID = 19A, VDS = 80V, VGS = 10V, Note 4 – – 61 nC – – 14 nC – – 29 nC – 16 – ns – 73 – ns td(off) – 34 – ns tf – 57 – ns Between lead, .250in. (6.0) mm from package and center of die contact – 4.5 – nH – 7.5 – nH VGS = 0V, VDS = 25V, f = 1MHz – 1400 – pF Total Gate Charge Qg Gate–to–Source Charge Qgs Gate–to–Drain (“Miller”) Charge Qgd Turn–On Delay Time td(on) Rise Time tr Turn–Off Delay Time Fall Time VDD = 50V, ID = 19A, RG = 9.1Ω, RD = 2.4Ω, Ω Note 4 Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss – 590 – pF Reverse Transfer Capaticance Crss – 140 – pF Source–Drain Ratings and Characteristics: Parameter Symbol Continuous Source Current (Body Diode) IS Test Conditions Min Typ Max Unit – – 19 A Pulsed Source Current (Body Diode) ISM Note 1 – – 72 A Diode Forward Voltage VSD TJ = +25°C, IS = 3.5A, VGS = 0V, Note 3 – – 5.0 V Reverse Recovery Time trr – 130 260 ns Reverse Recovery Charge Qrr TJ = +25°C, IF = 3.5A, di/dt = 100A/µs, Note 3 – 0.35 0.70 µC Forward Turn–On Time ton Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD) Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab