NTE2388 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2388 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D Low rDS(on) to Minimize On–Losses. Specified at Elevated Temperatures. D Rugged – SOA is Power Dissipation Limited D Source–to–Drain Diode Characterized for Use With Inductive Loads Absolute Maximum Ratings: Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Drain–Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current, ID Continuous TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A Peak TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C Maximum Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Maximum Lead Temperature (During soldering, 1/8” from case for 5sec), TL . . . . . . . . . . . . +300°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 200 – – V VGS = 0, VDS = Max Rating – – 200 µA VGS = 0, VDS = 160V, TC = +125°C – – 1000 µA OFF Characteristics Drain–Source Breakdown Voltage Zero–Gate Voltage Drain Current V(BR)DSS ID = 250µA, VGS = 0 IDSS Gate–Body Leakage Current, Forward IGSSF VDS = 0, VGSF = 20V – – 100 nA Gate–Body Leakage Current, Reverse IGSSR VDS = 0, VGSR = 20V – – 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 – 4 V Static Drain–Source On Resistance RDS(on) VGS = 10V, ID = 10A – – 0.18 Ω VGS = 10V, VDS ≥ 3.2V 18 – – A gfs VDS ≥ 3.2V, ID = 10A 6 – – mhos Input Capactiance Ciss – – 1600 pf Output Capacitance Coss VDS = 25V, VGS = 0, f = 1MHz – – 750 pf Reverse Transfer Capactiance Crss – – 300 pf – – 30 ns – – 60 ns td(off) – – 80 ns tf – – 60 ns – 38 60 nC – 16 – nC – 22 – nC – 1.8 2.0 V ON Characteristics (Note 1) On–State Drain Current Forward Transconductance ID(on) Dynamic Characteristics Switching Characteristics (Note 1) Turn–On Time Rise Time Turn–Off Delay Time Fall Time td(on) tr Total Gate Charge Qg Gate–Source Charge Qgs Gate–Drain Charge Qgd VDD [ 75V, ID = 10APEAK, Rg = 4.7Ω Ω VDS = 160V, VGS = 10V, ID = Rated ID Source Drain Diode Characteristics (Note 1) Forward ON Voltage VSD Forward Turn–On Time ton Reverse Recovery Time trr IS = Rated ID, VGS = 0 Limited by stray inductance – 450 – ns Measured from the contact screw on tab to center of die – 3.5 – nH Measured from the drain lead 0.25” from package to center of die – 4.5 – nH Measured from the source lead 0.25” from package to source bond pad – 7.5 – nH Internal Package Inductance Internal Drain Inductance Internal Source Inductance Ld Ls Note 1. Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab