NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V Absolute Maximum Ratings; Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current–Continuous, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Emitter Current–Continuous, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W Maximum Lead Temperature (Soldering Purposes, 1/8” from case for 5sec), TL . . . . . . . . . +275°C Electrical Characteristics: (TC =+25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 750 – – V OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) VC = 50mA, IB = 0 Collector Cutoff Current ICES VCE = 1500V, VBE = 0 – – 0.25 mA Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 0.1 mA Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 1A – – 5.0 V Base Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 1A – – 1.5 V IC = 5A, IB1 = 1A, LB = 8µH – 0.4 1.0 µs ON Characteristics (Note 1) SWITCHING CHARACTERISTICS Fall Time tf Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle = 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min E .040 (1.02) 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max B C/Case