NTE2406 Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2407) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (FR–5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), RthJA . . . . . . . . . . . . . . 556°C/W Total Device Dissipation (Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), RthJA . . . . . . . . 417°C/W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm). Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 75 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 40 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6 – – V ICBO VCB = 60V, IE = 0 – – 0.01 µA VCB = 60V, IE = 0, TA = +125°C – – 10 µA ICEX VCE = 60V, VEB(off) = 3V – – 10 nA IEBO VEB = 3V, IC = 0 – – 10 nA VCE = 60V, VEB(off) = 3V – – 20 nA Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current IBL Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 10V, IC = 0.1mA 35 – – VCE = 10V, IC = 1mA 50 – – VCE = 10V, IC = 10mA 75 – – VCE = 10V, IC = 10mA, TA = –55°C 35 – – VCE = 1V, IC = 150mA 50 – – VCE = 10V, IC = 150mA 100 – 300 VCE = 10V, IC = 500mA 40 – – IC = 150mA, IB = 15mA – – 0.3 V IC = 500mA, IB = 50mA – – 1.0 V IC = 150mA, IB = 15mA 0.6 – 1.2 V IC = 500mA, IB = 50mA – – 2.0 V 300 – – MHz ON Characteristics (Note 3) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage hFE VCE(sat) VBE(sat) Small–Signal Characteristics Current Gain–Bandwidth Product fT IC = 20mA, VCB = 20V, f = 100MHz Output Capacitance Cobo VCB = 10V, IE = 0, f = 1MHz – – 8 pF Input Capacitance Cibo VEB = 0.5V, IC = 0, f = 1MHz – – 25 pF Input Impedance hie VCE = 10V, IC = 1mA, f = 1kHz 2 – 8 kΩ VCE = 10V, IC = 10mA, f = 1kHz 0.25 – 1.25 kΩ VCE = 10V, IC = 1mA, f = 1kHz – – 8 x 104 VCE = 10V, IC = 10mA, f = 1kHz – – 4 x 104 VCE = 10V, IC = 1mA, f = 1kHz 50 – 300 VCE = 10V, IC = 10mA, f = 1kHz 75 – 375 VCE = 10V, IC = 1mA, f = 1kHz 5 – 35 µmhos VCE = 10V, IC = 10mA, f = 1kHz 25 – 200 µmhos VCB = 20V, IE = 20mA, f = 31.8MHz – – 150 ps IC = 100µA, VCE = 10V, RS = 1kΩ,,f = 1kHz – – 4 dB VCC = 30V, IC = 150mA, VBE(off) = 0.5V, IB1 = 15mA – – 10 ns – – 25 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA – – 225 ns – – 60 ns Voltage Feedback Ratio Small–Signal Current Gain Output Admittance Collector–Base Time Constant Noise Fiqure hre hfe hoe rb’Cc NF Switching Characteristics Delay Time td Rise Time tr Storage Time ts Fall Time tf Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .016 (0.48) C B .098 (2.5) Max E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)