NTE2519 (NPN) & NTE2520 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Breakdown Voltage D Large Current Capacity D Isolated Package Applications: D Color TV Audio Output D Converters D Inverters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 120V, IE = 0 – – 1.0 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 1.0 µA DC Current Gain hFE VCE = 5V, IC = 100mA 140 – 400 VCE = 5V, IC = 10mA 90 – – VCE = 10V, IC = 50mA – 120 – Gain Bandwidth Product fT MHz Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Output Capacitance NTE2519 Test Conditions Cob VCB = 10V, f = 1MHz NTE2520 Collector to Emitter Saturation Voltage NTE2519 VCE(sat) IC = 500mA, IB = 50mA NTE2520 Base to Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 50mA Min Typ Max Unit – 14 – pF – 22 – pF – 0.13 0.45 V – 0.2 0.5 V – 0.85 1.2 V Collector to Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 180 – – V Collector to Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 160 – – V Emitter to Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6 – – V – 0.04 – µs – 1.2 – µs – 0.7 – µs – 0.08 – µs – 0.04 – µs Rise Time ton Storage Time NTE2519 tstg IC = 10A, IB1 = 10A, IB2 = 700mA, Note 1 NTE2520 Fall Time NTE2519 tf NTE2520 Note 1. Pulse Width = 20µs, Duty Cycle ≤ 1%. .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4)