NTE2524 (NPN) & NTE2525 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector–Emitter Saturation Voltage D High Current and High fT D Excellent Linearity of hFE D Fast Switching Time Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 40V, IE = 0 – – 1.0 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 1.0 µA DC Current Gain hFE VCE = 2V, IC = 500mA 100 – 400 VCE = 2V, IC = 6A 35 – – VCE = 5V, IC = 1A – 180 – MHz – 130 – MHz – 65 – pF – 95 – pF Gain–Bandwidth Product NTE2524 fT NTE2525 Output Capacitance NTE2524 NTE2525 Cob VCB = 10V, f = 1MHz Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Collector–Emitter Saturation Voltage NTE2524 VCE(sat) Test Conditions IC = 4A, IB = 200mA NTE2525 Base–Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 200mA Min Typ Max Unit – 200 400 mV – 250 500 mV – 0.95 1.2 V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 60 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 50 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6 – – V – 50 – ns – 500 – ns – 450 – ns Turn–On Time ton Storage Time NTE2524 tstg VCC = 25V, VBE = –5V, 10IB1 = –10IB2 = IC = 4A, Pulse Width = 20µs, Duty Cycle ≤ 1%, Note 1 NTE2525 Fall Time tf 20 Note 1. For NTE2525, the polarity is reversed. .256 (6.5) .090 (2.3) .002 (0.5) .197 (5.0) .059 (1.5) .275 (7.0) B C E .295 (7.5) .002(0.5) .090 (2.3) ns