NTE NTE2544

NTE2544
Silicon NPN Transistor
Darlington Driver
Features:
D Darlington Conncetion
D High DC Current Gain
D Low Dependence of DC Current Gain on Temperature
Applications:
D Motor Driver
D Printer Hammer Driver
D Relay Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltge, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A
Collector Dissiption, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 100V, IE = 0
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
2.5
mA
DC Current Gain
hFE
VCE = 3V, IC = 0.5A
1000
–
–
VCE = 3V, IC = 1A
2000
–
30000
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 1A, IB = 2mA
–
–
1.5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 1A, IB = 2mA
–
–
2.0
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
120
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, RBE = ∞
120
–
–
V
Schematic Diagram
C
B
E
.330 (8.38) Max
.175
(4.45)
Max
.450
(11.4)
Max
.118
(3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
E
C
B
.090 (2.28)
.130 (3.3)
Max