NTE NTE2564

NTE2564 (NPN) & NTE2565 (PNP)
Complementary Silicon Transistors
High Current Switch
Features:
D Low Collector Emitter Saturation Voltage
D High Current Capacity
Applications:
D Relay Drivers
D High Speed Inverters
D Converters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 40V, IE = 0
–
–
0.1
mA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
–
–
0.1
mA
DC Current Gain
hFE
VCE = 2V, IC = 1A
100
–
280
VCE = 2V, IC = 4A
30
–
–
VCE = 5V, IC = 1A
–
120
–
MHz
IC = 3A, IB = 150mA
–
–
0.4
V
–
–
0.5
V
Gain–Bandwidth Product
Collector Emitter Saturation Voltage
NTE2564
NTE2565
fT
VCE(sat)
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
Min
Typ
Max
Unit
60
–
–
V
Collector Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
30
–
–
V
Emitter Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
6
–
–
V
–
0.1
–
µs
–
0.5
–
µs
–
0.2
–
µs
–
1.6
–
µs
Turn–On Time
ton
Storage Time
NTE2564
tstg
VCC = 10V, VBE = –5V,
20IB1 = –20IB2 = IC = 4A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
NTE2565
Fall Time
tf
Note 1. For NTE2565, the polarity is reversed.
.402 (10.2)
.035
(0.9)
.177 (4.5)
.051 (1.3)
.346
(8.8)
B
C
E
.433
(11.0)
.019 (0.5)
.100 (2.54)