NTE2578 Silicon NPN Transistor TV Horizontal Deflection Output Features: D Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 40V, IE = 0 – – 0.1 mA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 0.1 mA DC Current Gain hFE VCE = 5V, IC = 1A 30 – 60 VCE = 5V, IC = 4A 25 – – VCE = 5V, IC = 1A – 10 – MHz Gain Bandwidth Product fT Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 400mA – 0.5 1.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 400mA – – 1.5 V 200 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞ 60 – – V Emitter–Base Breakdown Voltage 6 – – V – 0.2 0.5 µs Collector–Base Breakdown Voltage Fall Time V(BR)CBO IC = 5mA, IE = 0 V(BR)EBO IC = 5mA, IC = 0 tf VCC = 50V, VBB = 5V, IC = 5A, IB1 = –IB2 = 500mA, PW = 20µs, Duty Cycle ≤ 2.5% .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated