NTE2579 Silicon NPN Transistor High Voltage, High Speed Switch Features: D Fast Switching Speed D Low Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Rqange, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 250V, IE = 0 – – 100 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 100 µA DC Current Gain hFE VCE = 1V, IC = 1A 15 – – VCE = 1V, IC = 5A 10 – 50 VCE = 10V, IC = 500mA 10 40 – MHz Gain–Bandwidth Product fT Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 500mA – – 0.8 V Base–Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 500mA – – 1.5 V Collector–Base Breakdown Voltage V(BR)CBO IC = 1A, IE = 0 400 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 200 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 6 – – V – – 0.3 µs Fall Time tf VCC = 50V, IC = 5A, IB1 = –IB2 = 500mA, Pulse Width = 20µs, Duty Cycle ≤ 1% .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab