NTE NTE2596

NTE2596
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide ASO Range
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 500V, IE = 0
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
10
µA
DC Current Gain
hFE(1)
VCE = 5V, IC = 4.8A
20
–
50
hFE(2)
VCE = 5V, IC = 24A
8
–
–
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 24A, IB = 4.8A
–
–
1.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 24A, IB = 4.8A
–
–
1.5
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Collector–Base Breakdown Voltage
Test Conditions
V(BR)CBO IC = 1mA, IE = 0
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
Collector–Emitter Sustaining Voltage VCEX(sus) IC = 15A, IB1 = –IB2 = 2A,
L = 100µH, Clamped
Turn–On Time
ton
Storage Time
tstg
Fall Time
tf
VCC = 200V,
5IB1 = –2.5IB2 = IC = 26A,
RL = 7.7Ω
Min
Typ
Max Unit
800
–
–
V
500
–
–
V
7
–
–
V
500
–
–
V
–
–
0.5
µs
–
–
3.0
µs
–
–
0.2
µs
.204 (5.2)
.810 (20.57)
Max
.236
(6.0)
1.030
(26.16)
.137 (3.5)
Dia Max
.098
(2.5)
.215 (5.45)
.787
(20.0)
.040 (1.0)
B
C
.023 (0.6)
E
Note: Collector connected to heat sink