NTE NTE2597

NTE2597
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D High Breakdown Voltage and Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Collector Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 800V, IE = 0
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
10
µA
DC Current Gain
hFE
VCE = 5V, IC = 0.8A
10
–
40
VCE = 5V, IC = 4A
8
–
–
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 6A, IB = 1.2A
–
–
2.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 6A, IB = 1.2A
–
–
1.5
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Gain–Bandwidth Product
Output Capacitance
Collector–Base Breakdown Voltage
Symbol
Test Conditions
Typ
Max
Unit
fT
VCE = 10V, IC = 0.8A
–
15
–
MHz
Cob
VCB = 10V, f = 1MHz
–
215
–
pF
1100
–
–
V
800
–
–
V
7
–
–
V
800
–
–
V
–
–
0.5
µs
–
–
3.0
µs
–
–
0.3
µs
V(BR)CBO IC = 1mA, IE = 0
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
Collector–Emitter Sustaining Voltage
VCEX(sus) IC = 6A, IB1 = 1.2A, IB2 = –1.2A,
L = 500µH Clamped
Turn–On Time
ton
Storage Time
tstg
Fall Time
Min
IC = 8A, IB1 = 1.6A,
IB2 = –3.2A, RL = 50Ω,
Ω
VCC = 400V
tf
.134 (3.4) Dia
.221 (5.6)
.123 (3.1)
.630 (16.0)
.315
(8.0)
.866
(22.0)
B
C
E
.158 (4.0)
.804
(20.4)
.215 (5.45)
.040 (1.0)