NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate MOS processing. With its single +5V power supply and with an access time of 200ns, the NTE2732A is ideal for use with high performance +5V microprocessors such as the NTE3880. The NTE2732A has an important feature which is the separate output control, Output Enable (OE) from the Chip Enable control (CE). The OE control eliminates bus contention in multiple bus microprocessor systems. The NTE2732A also features an standby mode which reduces the power dissipation without increasing access time. The active current is 125mA while the maximum standby mode is achieved by applying a TTL–high signal to the CE input. Features: D Fast Access Time: 200ns Max D 0° to +70°C Standard Temperature Range D Single +5V Power Supply D Low Standby Current (35mA Max) D Inputs and Outputs TTL Compatible During Read and Program D Completely Static Absolute Maximum Ratings: (Note 1) All Input or Output Voltages with respect to GND, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 to –0.6V Supply Voltage with respect to GND during Program, Vpp . . . . . . . . . . . . . . . . . . . . . . . +22 to –0.6V Ambient Temperature under Bias, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10° to +80°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C Note 1. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Operating Modes: PINS CE OE/Vpp VCC OUTPUTS MODE (18) (20) (24) (9 – 11, 13–17) READ VIL VIL +5 DOUT STANDBY VIH Don’t Care +5 HIGH Z PROGRAM VIL VPP +5 DIN PROGRAM VERIFTY VIL VIL +5 DOUT PROGRAM INHIBIT VIH VPP +5 HIGH Z Read Operation (DC and AC Conditions): Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C VCC Power Supply (Note 2, Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ± 5% Vpp Voltage (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Vpp = VCC Note 2. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. Note 3. VPP may be connected directly to VCC except during programming. The supply current would then be the sum of ICC and IPP1. DC and Operating Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Input Load Current ILI VIN = 5.5V – – 10 µA Output Leakage Current ILO VOUT = 5.5V – – 10 µA VCC Current Standby ICC1 CE = VIH, OE = VIL, Note 3 – – 35 mA VCC Current Standby ICC2 CE = OE = VIL, Note 3 – 70 125 mA Input Low Voltage VIL –0.1 – +0.8 V Input High Voltage VIH 2.0 VCC+1 V Output Low Voltage VOL IOL= 2.1mA Output High Voltage VOH IOH = –400µA – – 0.45 V 2.4 – – V Note 3. VPP may be connected directly to VCC except during programming. The supply current would then be the sum of ICC and IPP1. Note 4. Typical values are for TA = +25°C and nominal supply voltages. AC Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Address to Output Delay tACC CE = OE = VIL – – 200 ns CE to Output Delay tCE OE = VIL – – 200 ns OE to Output Delay tOE CE = VIL – – 100 ns OE High to Output Float tDF CE = VIL, Note 5 0 – 60 ns Output Hold from Addresses CE or OE whichever occurred first tOH CE = OE = VIL 0 – – ns Min Typ Max Unit Note 4. Typical values are for TA = +25°C and nominal supply voltages. Note 5. This parameter is only sampled and is not 100% tested. Capacitance: (TA = +25°C, f = 1MHz, Note 5 unless otherwise specified) Parameter Symbol Test Conditions Input Capacitance except OE/Vpp CIN1 VIN = 0 – 4 6 pF OE/Vpp Input Capacitance CIN2 VIN = 0 – – 20 pF Output capacitance COUT VOUT = 0 – 8 12 pF Note 4. Typical values are for TA = +25°C and nominal supply voltages. Note 5. This parameter is only sampled and is not 100% tested. Read Operation (AC Test Conditions): Output Load: 100pF + 1TTL Gate Input Rise and Fall Times: ≤ 20ns Input Pulse Levels: 0.45 to 2.4V Timing Measurement Reference Levels: Inputs 0.8 and 2V/0.8 and 2V AC Waveforms: ADDRESSES ADDRESSES VALID CE tCE OE tDE (Note 6) tACC tDE (Note 7) tOH HIGH Z OUTPUT HIGH Z VALID OUTPUT Note 6. OE may be delayed up to tACC – tOE after the falling edge CE without impact on tACC. Note 7. tDF is specified from OE or CE whichever occurs first. Read Mode: The NTE2732A has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip Enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that addresses are stable, address access time (tACC) is equal to delay from CE to output (tCE). Data is available at the outputs after the falling edge of OE, assuming that CE has been low and addresses have been stable for at least tACC–tOE. Standby Mode: The NTE2732A has a standby mode which reduces the active power current by 70%, from 125mA to 35mA. The NTE2732A is placed in the standby mode by applying a TTL high signal to CE input. When in standby mode, the outputs are in a high impedance state, independent of the OE input. Output OR–Tieing: Because NTE2732A’s are usually used in larger memory arrays, the product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a) the lowest possible memory power dissipation b) complete assurance that output bus contention will not occur To most efficiently use these two control lines, it is recommended that CE be decoded and used as the primary device selecting function, while OE should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This assures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is desired from a particular memory device. Programming Operation: (TA = +25°C ± 5°C, VCC = 5V ±5%, VPP = 21V ± 0.5V, Note 8, Note 9) DC and AC Operating Characteristics: Parameter Symbol Test Conditions VIN = VIL or VIH Min Typ Max Unit – – 10 µA Input Current (All Inputs) ILI Input Low Level VIL –0.1 – 0.8 V Input High Level VIH 2.0 – VCC+1 V Output Low Voltage During Verify VOL IOL = 2.1mA – – 0.45 V Output High Voltage During Verify VOH IOH = –400µA 2.4 – – V VCC Supply Current (Active) ICC2 – 70 125 mA VPP Supply Current IPP – – 30 mA CE = VIL, OE = VPP Note 8. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after VPP. The NTE2732A must not be inserted into or removed from a board with VPP at 21 ± 0.5V or damage may occur to the device. Note 9. The maximum allowable voltage which may be applied to the VPP pin during programming is +22V. Care must be taken when switching the VPP supply to prevent overshoot exceeding this 22V maximum specification. AC Characteristics: Parameter Symbol Min Typ Max Unit tAS 2 – – µs OE Set Up Time tOES 2 – – µs Data Set Up Time tDS 2 – – µs Address Hold Time tAH 0 – – µs Data Hold Time tDH 2 – – µs Chip Enable to Output Float Delay tDF 0 – 130 ns Data Valid from CE tDV – – 1 µs CE Pulse Width During Programming tPW 45 50 55 ms OE Pulse Rise Time During Programming tPRT 50 – – ns VPP Recovery Time tVR 2 – – µs Address Set Up Time Test Conditions CE = VIL, OE = VIL Programming Waveforms: PROGRAM ADRESSES PROGRAM VERIFY ADDRESSS N tAS (Note 12) DATA IN STABLE ADD N tDS tDH (Note 12) (Note 12) DATA Hi Z tDV (Note 11) VPP DATA OUT VALID ADD N tDF (0.13) Max tAH (0) OE/VPP VIL tOES (Note 12) tPRT (0.05) tPW (45ms) tOEH (Note 12) tVR (Note 12) VIH CE VIL Note 11. All times shown in ( ) are minimum and in µs unless otherwise specified. Note12. The input timing reference level is 1V for VIL and 2V for VIH. Note13. tOE and TDF are characteristics of the device but must be accommodate by the programmer. Programming (CAUTION: Exeeding 22V on pin (Vpp) will damage the NTE2732A); When delivered, and after each erasure, all bits of the NTE2732A are in the “1” state. Data is introduced by selectively programming “0”s into the desired bit locations. Although only “0”s will be programmed, both “1”s and “0”s can be presented in the data word. The only way to change a “0” to a “1” is by ultraviolet light erasure. The NTE2732A is in the programming mode when the OE/VPP input is at 21V. It is required that a 0.1µF capacitor be placed across OE/VPP and ground to suppress spurious voltage transients which may damage the device. The data to be programmed is applied 8 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. When the address and data are stable, a 50msec, active low, TTL program pulse is applied to the CE input. A program pulse must be applied at each address location to be programmed. You can program any location at any time–either individualy, sequentially, or at random. The program pulse has a maximum width of 55msec. The NTE2732A must not be programmed with a DC signal applied to the CE input. Programming of multiple NTE2732A is in parallel with the same data can be easily accomplished due to the simplicity of the programming requirements. Like inputs of the paralleled NTE2732As may be connected together when they are programmed with the same data. A low level TTL pulse applied to the CE input programs the paralleled NTE2732As. Program Inhibit: Programming of multiple NTE2732As in parallel with different data is also easily accomplished. Except for CE, all like inputs (including OE/Vpp) of the parallel NTE2732As may be common. A TTL level program pulse applied to a NTE2732As CE input with OE/VPP at 21V will program that NTE2732A. A high level CE input inhibits the other NTE2732As from being programmed. Program Verify: A verify should be performed on the programmed bits to determine that they were correctly programmed. The verify is accomplished with OE/VPP and CE at VIL. Erasure Operation: The erasure characteristics of the NTE2732A are such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Angstroms (A). It should be noted that sunlight and certain types of fluorescent lamps have wavelengths in the 3000–4000 A range. Data shows that constant exposure to room level fluorescent lighting could erase a typical NTE2732A in approximately 3 years, while it would take approximately 1 week to cause erasure when exposed to the direct sunlight. If the NTE2732A is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the NTE2732A window to prevent unintentional erasure. The recommended erasure procedure for the NTE2732A is exposure to shortwave ultraviolet light which has a wavelength of 2537 Angstroms (A). The integrated dose (i.e. UV intensity x exposure time) for erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000 µW/cm2 power rating. The NTE2732A should be placed within 2.5cm of the lamp tubes during erasure. Some lamps have a filter on their tubes which should be removed before erasure. Pin Connection Diagram A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC A8 A9 A11 OE/VPP A10 CE O7 O6 O5 O4 O3 1.290 (32.76) Max 24 .600 (15.24) Max Glass 13 .520 (13.2) 1 12 .280 (7.11) Dia UV Window Glass Sealant .160 (4.06) Max .200 (5.08) Max .100 (2.54) .125 (3.17) .670 (17.02)