NTE NTE274

NTE274 (NPN) & NTE275 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier, Switch
Description:
The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66
type case designed for general purpose amplifier, low–frequency switching and hammer driver
applications.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 2A
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.286W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
80
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 50mA, IB = 0
ICEO
VCE = 40V, IB = 0
–
–
0.5
mA
ICER
VCE = 80V, VEB(off) = 1.5V
–
–
0.5
mA
VCB = 80V, VEB(off) = 1.5V, TA = +150°C
–
–
5.0
mA
VBE = 5V, IC = 0
–
–
2.0
mA
IEBO
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 3V, IC = 2A
750
–
18000
VCE = 3V, IC = 4A
100
–
–
IC = 2A, IB = 8mA
–
–
2.0
V
IC = 4A, IB = 40mA
–
–
3.0
V
ON Characteristics
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
VCE(sat)
Base–Emitter Saturation Voltage
VBE(sat)
IC = 4A, IB = 40mA
–
–
4.0
V
Base–Emitter ON Voltage
VBE(on)
VCE = 3V, IC = 2A
–
–
2.8
V
IC = 1.5A, VCE = 3V, f = 1MHz
4.0
–
–
VCB = 10V, IE = 0, f = 0.1MHz
–
–
120
pF
–
–
200
pF
300
–
–
Dynamic Characteristics
Magnitude of Common Emitter
Small–Signal Short–Circuit
Forward Current Transfer Ratio
|hfe|
Output Capacitance
NTE274
Cob
NTE275
Small–Signal Current Gain
hfe
IC = 1.5A, VCE = 3V, f = 1kHz
NTE274
C
B
.485 (12.3)
Dia
.295 (7.5)
.062 (1.57)
E
.031 (0.78) Dia
.960 (24.3)
NTE275
.360 (9.14)
Min
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
C
.145 (3.7) R Max
B
Collector/Case
E
Emitter