NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 1 300 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 300 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V Collector Cutoff Current ICBO VCB = 200V, IE = 0 – – 0.2 µA Emitter Cutoff Current IEBO VBE = 3V, IC = 0 – – 0.1 µA Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max IC = 1mA, VCE = 10V 25 – – IC = 10mA, VCE = 10V 30 – – IC = 30mA, VCE = 10V 30 – – Unit ON Characteristics DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) IC = 30mA, IB = 3mA – – 0.75 V Base–Emitter Saturation Voltage VBE(sat) IC = 30mA, IB = 3mA – – 0.9 V IC = 10mA, VCE = 20V, f = 10MHz 45 – – MHz VCB = 20V, IE = 0, f = 1MHz – – 8 pF Dynamic Characteristics Current Gain–Bandwidth Product fT Collector–Base Capacitance Ccb Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) .325 (9.52) 1.200 (30.48) Ref .070 (1.78) x 45° Chamf .300 (7.62) .050 (1.27) .400 (10.16) Min E .100 (2.54) B C .100 (2.54)