NTE2975 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Advanced Process Technology D Ultra Low On–State Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 10V) TC = +25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37A Pulse (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107W Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W/°C Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11mJ Single Pulse Avalanche Energy (Note 3, Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152mJ Peak Diode Recovery (Note 5), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +300°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W Typical Thermal Resistance, Case–to–Sink (Flat, greased surface), RthCS . . . . . . . . . . . . . 0.5°C/W Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A. Note 2. Repetitive rating; pulse width limited by maximum junction temperature. Note 3. Starting TJ = +25°C, L = 389µH, RG = 25Ω, IAS = 28A. Note 4. This is a calculated value limited to TJ = +175°C. Note 5. ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ +175°C Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol V(BR)DSS Test Conditions VGS = 0V, ID = 250µA ∆V(BR)DSS Reference to +25°C, ID = 1mA Min Typ Max Unit 55 – – V – 0.057 – V/°C – – 16.5 mΩ Static Drain–Source On–Resistance ∆TJ RDS(on) VGS = 10V, ID = 28A, Note 6 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – 4.0 V VDS = 25V, ID = 28A, Note 6 19 – – S VDS = 55V, VGS = 0 – – 25 µA VDS = 44V, VGS = 0, TJ = +150°C – – 250 µA VGS = 20V – – 100 nA VGS = –20V – – –100 nA VGS = 10V, ID = 28A, VDS = 44V – – 72 nC Forward Transconductance Drain–Source Leakage Current Gate–Source Forward Leakage Current gfs IDSS IGSS Total Gate Charge QG Gate–Source Charge QGS – – 11 nC Gate–Drain (“Miller”) Charge QGD – – 26 nC Turn–On Delay Time td(on) – 14 – ns – 76 – ns td(off) – 52 – ns tf – 57 – ns Between lead, .250 (6mm) from package and center of die contact – 4.5 – nH – 7.5 – nH VDS = 25V, VGS = 0, f = 1MHz – 1696 – pF Rise Time Turn–Off Delay Time tr Fall Time VGS = 10V, VDD = 28V, ID = 28A, RG = 12Ω Ω Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss – 407 – pF Reverse Transfer Capacitance Crss – 110 – pF – – 53 A Note 2 – – 180 A TJ = +25°C, IS = 28A, VGS = 0, Note 6 – – 1.3 V TJ = +25°C, IF = 28A, di/dt = 100A/µs, µ Note 6 – 67 101 ns – 208 312 nC Source–Drain Ratings and Characteristics Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) IS ISM Diode Forward Voltage VF(S–D) Reverse Recovery Time trr Reverse Recovery Charge Qrr Forward Turn–On Time ton Intristic turn–on time is negligible (turn–on is dominated by LS + LD) Note 2. Repetitive rating; pulse width limited by maximum junction temperature. Note 6. Pulse width ≤ 400µs, duty cycle ≤ 2%. .420 (10.67) Max .110 (2.79) Isol .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain