NTE3028 Infrared Emitting Diode PN Gallium Arsenide Description: The NTE3028 is designed for applications requiring high power output, low drive power, and very fast response time. This device is used in industrial processing and control, light modulators, shaft or position encoders, punched card readers, optical switching, and logic circuits. It is spectrally matched for use with silicon detectors. Features: D High Power Output D Infrared Emission D Low Drive Current D Popular TO18 Type Package for Easy Handling and Mounting Absolute Maximum Ratings: Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (PW = 100µs, Duty Cycle = 2%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.27mW/°C Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Note 1. Printed circuit board mounting. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Min Typ Max Unit VR = 3V – 2 – nA V(BR)R IR = 100µA 6 20 – V Forward Voltage VF IF = 50mA – 1.32 1.5 V Total Capacitance CT VR = 0V, f = 1MHz – 18 – pF Reverse Leakage Current Reverse Breakdown Voltage Symbol IR Test Conditions Optical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Total Output Power PO Test Conditions Min Typ Max Unit – 2.5 – mW IF = 100mA, Note 2, Note 3 1.0 4.0 – mW IF = 100mA, Note 3, Note 4 – 1.5 – mW/ steradian IF = 60mA, Note 2 Radiant Intensity IO Peak Emission Wavelength λP – 940 – nm Spectral Line Half Width ∆λ – 40 – nm Note 2. Power Output, PO, is the total power radiated by th device into a solid angle of 2π steradians. It is measured by directing all radiation leaving the device, within this solid angle, onto a calibrated silicon solar cell. Note 3. PW = 100µs, Duty Cycle = 2%. Note 4. Irradiance from a Light Emitting Diode (LED) can be calculated by: I H = e2 d where H is irradiance in mW/cm2 Ie is radiant intensity in mW/steradian d2 is distance from LED to the detector in cm .186 (4.72) Dia .145 (3.68) Dia .030 (.762) Seating Plane Anode .195 (4.95) Cathode .500 (12.7) Min .018 (0.45) Dia Typ .040 (1.02) .220 (5.59) Dia .100 (2.54)