NTE3031 Phototransistor Detector NPN–Si, Visible & IR Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Lead temperature (During Soldering, 3 min), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 10V – – 100 nA Collector–Emitter Breakdown Voltage V(BR)CEO IC = 100µA 30 – – V Emitter–Collector Breakdown Voltage V(BR)ECO IE = 100µA 5 – – V IC = 0.4mA – 0.2 – V Static Characteristics Collector Dark Current Saturation Voltage ID VCE(sat) Optical Characteristics Light Current IL VCE = 5V, RL = 100Ω, Note 1 1 – – mA Photo Current Rise Time tr RL = 1000Ω, VCC = 5V, IL = 1mA (Peak) – 6 – µs Note 1. Radiation flux density (H) equal to 5mW/cm2 emitted from a tungsten source at a color temperature of 2875 K. Note 2. Angular response is defined as the total included angle between the half sensitivity points and assuming a point source. .210 (5.33) Dia .184 (4.67) Dia .155 (3.94) Dia Window on Center Line .208 (5.28) .150 (3.81) Die Seating Plane .021 (0.53) .500 (12.7) Min .018 (0.45) Dia Typ .040 (1.02) .100 (2.54) Dia Collector 45° Emitter Base