NTE3032 Phototransistor Detector NPN–Si, Visible & IR Description: The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications or any design requiring radiation sensitivity and stable characteristics. Features: D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application D Minimum Light Current: 8mH @ H = 5mW/cm2 D External Base for Added Control D Annular Passivated Structure for Stability and Reliability D Popular TO18 Type Package for Easy Handling and Mounting Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Total Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – – 100 nA Static Characteristics Collector Dark Current ICEO VCC = 10V, H ∼ 0 Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA 80 – – V Emitter–Collector Breakdown Voltage V(BR)ECO IE = 100µA 5 – – V Optical Characteristics Light Current IL VCC = 5V, RL = 100Ω, Note 1 8 – – mA Photo Current Rise Time tr – 15 – µs Photo Current Fall Time tf RL = 100Ω, IL = 1mA (Peak), Note 2 – 15 – µs Note 1. Radiation flux density (H) equal to 5mW/cm2 emitted from a tungsten source at a color temperature of 2870 K. Note 2. For unsaturated response time measurement, radiation is provided by pulsed GaAs (gallium arsenide) light–emitting diode (λ ∼ µm) with a pulse width equal to or greater than 10µs, IL = 1mA Peak. .210 (5.33) Dia .184 (4.67) Dia .120 (3.05) Dia Window on Center Line .240 (6.09) .150 (3.81) Die Seating Plane .021 (0.53) .500 (12.7) Min .018 (0.45) Dia Typ .040 (1.02) .100 (2.54) Dia Collector 45° Emitter Base