NTE NTE3044

NTE3044
Optoisolator
NPN Darlington Transistor Output
Description:
The NTE3044 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic
silicon photodarlington detector in an 6–Lead DIP type package. This device is designed for use in
applications requiring high sensitivity at a low input current.
Features:
D High Sensitivity to Low Input Drive Current
D High Collector–Emitter Breakdown Voltage
D No Base Conncetion for Improved Noise Immunity
Applications:
D Appliances, Measuring Instruments
D I/O Interfaces for Computers
D Programmable Controllers
D Portable Electronics
D Interfacing and Coupling Systems of Different Potentials and Impedances
D Solid State Relays
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Input LED
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
LED Power Dissipation (with Negligible Power in Output Detector, TA = +25°C), PD . . . . . 120mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/°C
Output Detector
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Detector Power Dissipation (with Negligible Power in Output Detector, TA = +25°C), PD . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/°C
Total Device
Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . . 7500V
Total Device Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/°C
Ambient Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from Case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. Isolation surge voltage is an internal dielectric breakdown rating. For this test, Pin1 and Pin2
are common, and Pin4, Pin5, and Pin6 are common.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input LED
Reverse Leakage Current
IR
VR = 3V
–
0.05
10
µA
Forward Voltage
VF
IF = 10mA
–
1.15
2.0
V
Capacitance
C
VR = 0, f = 1MHz
–
18
–
pF
VCE = 60V
–
–
1
µA
Photodarlington (IF = 0)
Collector–Emitter Dark Current
ICEO
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA
80
–
–
V
Emitter–Collector Breakdown Voltage
V(BR)ECO IE = 100µA
5
–
–
V
30
–
–
mA
7500
–
–
V
–
Ω
Coupled
Collector Output Current
IC
VCE = 1.5V, IF = 10mA
Isolation Surge Voltage
VISO
60Hz Peak AC, 5sec, Note 2, Note 3
Isolation Resistance
RISO
V = 500V, Note 2
–
1011
Isolation Capacitance
CISO
V = 0, f = 1MHz, Note 2
–
0.2
–
pF
Turn–On Time
ton
–
3.5
–
µs
Turn–Off Time
toff
VCC = 10V, RL = 100Ω,
IF = 5mA
–
95
–
µs
Switching
Rise Time
tr
–
1
–
µs
Fall Time
tf
–
2
–
µs
Note 2. For this test, LED Pin1 and Pin2 are common and Phototransistor Pin4 and Pin5 are common.
Note 3. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
Pin Connection Diagram
Anode
1
6 N.C.
Cathode
2
5 Collector
N.C.
3
4 Emitter
6
5
4
.260
(6.6)
Max
1
2
3
.070 (1.78) Max
.350 (8.89)
Max
.200 (5.08)
Max
.085 (2.16) Max
.300 (7.62)
.350
(8.89)
Max
.100 (2.54)