NTE NTE3083

NTE3083
Optoisolator
NPN Darlington Transistor Output
Description:
The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo–
darlington in a 6–Lead DIP type package.
Features:
D High Sensitivity: 1mA on the Input will Sink a TTL gate
D High Isolation: 3550VDC, 1012Ω, 0.5pF
Absolute Maximum Ratings:
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Linearly to 100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C
Input to Output Isolation Voltage (1sec), VISOL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3550VDC
Input Diode
Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Peak Forward Current (1µs pulse, 300pps), IFpeak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Output Darlington
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125mA
Electro–Optical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
0.5
–
pF
Isolation Between Emitter and Detector
Capacitance
Ciso
f = 1MHz
Resistance
Riso
V = 500VDC
1011 1012
–
Ω
Voltage Breakdown
Viso
t = 1sec
3550
–
VDC
–
Electro–Optical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter (GaAs LED)
Forward Voltage
VF
IF = 20mA
–
1.15
1.50
V
Reverse Voltage
VR
IR = 10µA
3.0
25.0
–
V
Junction Capacitance
CJ
VR = 0V
–
50
–
pF
Detector (Silicon Photo–Darlington)
Collector Breakdown Voltage
V(BR)CEO IC = 1mA
30
60
–
V
Base Breakdown Voltage
V(BR)CBO IC = 10µA
30
60
–
V
Emitter Breakdown Voltage
V(BR)EBO IE = 10µA
6
8
–
V
VCE = 10V
–
1
100
nA
IC = 2mA, IF = 1mA
–
0.8
1.0
V
IC = 10mA, IF = 5mA
–
0.8
1.0
V
IC = 50mA, IF = 10mA
–
0.9
1.2
V
VCB = 5V, IF = 10mA
–
2
–
µA
Collector Leakage Current
ICEO
Saturation Voltage
VCE(sat)
Base Photo–Current
IB
Darlington Gain
hFE
IB = 1µA, VCE = 1V
–
50k
–
Collector–Emitter Capacitance
CCE
VCE = 10V
–
6
–
pF
Rise Time, Fall Time
tr, tf
VCC = 10V, IC = 10mA, RL = 100Ω
–
80
–
µs
TTL Gate Turn–On Time
tON
IF = 1mA
–
200
–
µs
TTL Gate Turn–Off Time
tOFF
IF = 1mA
–
400
–
µs
DC Collector Current Transfer
Ratio
CTR
IF = 10mA, VCE = 5V
200
400
–
%
Switching Times, Coupled
6
1
Anode
1
6 Base
Cathode
2
5 Collector
N.C.
3
4 Emitter
5
4
2
3
.260
(6.6)
Max
.070 (1.78) Max
.350 (8.89)
Max
.200 (5.08)
Max
.085 (2.16) Max
.300 (7.62)
.350
(8.89)
Max
.100 (2.54)