NTE314 Silicon Controlled Rectifier (SCR) Power Regulator Switch Description: The NTE314 is a silicon controlled rectifier (SCR) in a TO3 type package designed for 12.5 Ampere RMS, 400 Volt power supply and computer control applications to +100°C maximum junction. Features: D Low Forward “ON” Voltage D All Diffused Junctions for Greater Parameter Uniformity D Glass Passivated for Greater Stability Absolute Maximum Ratings: Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM, VRRM . . . . . . . . . . . . 400V RMS Forward Current (TC = +80°C, All Conduction Angles), IT(RMS) . . . . . . . . . . . . . . . . . . . . 12.5A Peak Forward Surge Current (1/2 Cycle Sine Wave, 60Hz, TJ = –40° to +100°C), ITSM . . . . . 200A Fusing Current (TJ = –40° to +100°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170A2s Forward Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Forward Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Forward Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Forward Gate Voltage, VGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19V Peak Reverse Gate Voltage, VGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7°C/W Note 1. VDRM and VRRM can be applied on a continuous DC basis without incurrent damage. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage. Electrical Characteristics: (VD = 400V, TC = +25°C unless otherwise specified) Parameter Peak Forward Blocking Current Peak Reverse Blocking Current Symbol IDRM IRRM Test Conditions Min Typ Max Unit TJ = +100°C – – 3 mA TJ = +25°C – – 10 µA TJ = +100°C – – 1.5 mA TJ = +25°C – – 10 µA Electrical Characteristics (Cont’d): (VD = 400V, TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Forward “ON” Voltage VTM ITM = 25A Peak, Note 2 – 1.1 1.8 V Gate Trigger Current (Continuous DC) IGT VD = 12V, RL = 24Ω, TJ = +25°C – 7 40 mA VD = 12V, RL = 24Ω, TJ = –40°C – – 80 mA VD = 12V, RL = 24Ω, TJ = –40°C – 1 3 V VD = 12V, RL = 24Ω, TJ = +25°C – 0.68 2 V VD = 12V, RL = 24Ω, TJ = +100°C 0.3 – – V Gate Trigger Voltage (Continuous DC) VGT Holding Current IH VD = 12V, IT = 0.5A – 20 50 mA Turn–On Time tgt ITM = 8A, IG = 0.2A, tr = 100ns – 0.5 – µs Turn–Off Time tq ITM = 8A, IG = 0.2A, dv/dt = 20V/µs, di/dt = 30A/µs, TC = +80°C, Pulse Width ≤ 50µs – 20 – µs TC = +100°C 10 100 – V/µs Forward Voltage Application Rate Exponential dv/dt Note 2. Pulse test: Pulse Width ≤ 1ms, Duty Cycle ≤ 1%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) 1.187 (30.16) Cathode .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Gate .525 (13.35) R Max Anode/Case