NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +95°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +95°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 1A, IB = 0 40 – – V OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO Floating Potential VEBF VCB = 50V, IE = 0 – – 1.0 V Collector Cutoff Current ICBO VCB = 2V, IE = 0 – – 300 µA VCB = 50V, IE = 0 – – 4.0 mA VCB = 50V, IE = 0, TB = +85°C – – 15 mA IEBO VBE = 30V, IC = 0 – – 8.0 mA hFE VCE = 4V, IC = 15A 15 – 60 VCE = 4V, IC = 25A 12 – – Emitter Cutoff Current ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage VCE(sat) IC = 25A, IB = 4A – – 0.7 V Base–Emitter Saturation Voltage VBE(sat) IC = 25A, IB = 3A – – 1.5 V hhfe VCE = 6V, IC = 5A – 4.0 – kHz Small–Signal Characteristics Common–Emitter Cutoff Frequency 1.250 (31.75 Dia Max 1.005 (25.55) Dia Max .500 (12.7) Max .520 (13.2) Max .710 (18.03) Max .312 (7.93) 10–32 UNF–2A .190 (4.83) Emitter Base .345 (8.76) Collector/Case