NTE348 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in military and industrial equipment to 300MHz. Features: D Specified 12.5V, 175MHz Characteristics: Output Power = 4W Minimum Gain = 12dB Efficiency = 50% Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (Note 1, TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.5mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 10mA, IB = 0 18 – – V V(BR)CES IC = 5mA, VBE = 0 36 – – V V(BR)EBO IE = 1mA, IC = 0 4 – – V OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ICBO VCB = 15V, IE = 0 – – 0.25 mA ICES VCE = 15V, VBE = 0, TC = +55°C – – 5 mA hFE IC = 250mA, VCE = 5V 5 – – ON Characteristics DC Current Gain Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – 15 20 pF 12 – – dB Dynamic Characteristics Output Capacitance Cob VCB = 15V, IE = 0, f = 0.1MHz Functional Tests (VCC = 12.5V unless otherwise specified) Common–Emitter Amplifier Power Gain GPE Pout = 4W, f = 175MHz 1.040 (26.4) Max .520 (13.2) C .230 (5.84) E E B .100 (2.54) .385 (9.8) Dia .005 (0.15) .168 (4.27) 8–32–NC–3A Wrench Flat .750 (19.05)