NTE349 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V VHF large–signal amplifier applications required in military and industrial equipment to 240MHz. Features: D Specified 13.6V, 175MHz Characteristics: Output Power = 10W Minimum Gain = 5.2dB Efficiency = 50% Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0171mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 200mA, IB = 0 18 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 2.5mA, IC = 0 4 – – V mA Collector Cutoff Current ICBO VCB = 15V, IE = 0 – – 1.0 hFE IC = 250mA, VCE = 5V 5 – – Cob VCB = 15V, IE = 0, f = 0.1 to 1MHz – 35 70 ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance pF Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Functional Tests (VCE = 13.6V unless otherwise specified) Common–Emitter Amplifier Power Gain GPE Pout = 10W, f = 175MHz 5.2 – – dB Power Input Pin POUT = 10W, f = 175MHz – – 3 W η Pout = 10W, f = 175MHz 50 – – % Collector Efficiency 1.040 (26.4) Max .520 (13.2) C .230 (5.84) E E B .100 (2.54) .385 (9.8) Dia .005 (0.15) .168 (4.27) 8–32–NC–3A Wrench Flat .750 (19.05)