NTE368 Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristic: Output Power = 60 Watts Minimum Gain = 4.4dB Efficiency = 55% D Characterized with Series Equivalent Large–Signal Impedance Parameters D Built–In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–volt High Line and Overdrive Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 50mA, IB = 0 16 – – V V(BR)CES IC = 50mA, VBE = 0 36 – – V V(BR)EBO IE = 5mA, IC = 0 4 – – V VCE = 15V, VBE = 0, TC = +25°C – – 15 mA ICES Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE VCE = 5V, IC = 6A 20 70 150 Cob VCB = 12.5V, IE = 0, f = 1MHz – 130 150 pF Common–Emitter Amplifier Power Gain GPE POUT = 60W, VCC = 12.5V, f = 470MHz 4.4 5.0 – dB Input Power Pin – 19 22 W Collector Efficiency η 55 60 – % Output Mismatch Stress ψ Dynamic Characteristics Output Capacitance Functional Test VCC = 16V, Pin = 26W, f = 470MHz, VSWR = 20:1, All Phase Angles No Degradation in Output Power Note 1. y = Mismatch stress factor – the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture terminated in a 20:1 minimum load mismatch at all phase angles. .215 (5.48) .205 (5.18) .122 (3.1) Dia E B .405 (10.3) Min C E .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78)