NTE NTE386

NTE386
Silicon NPN Transistor
Audio Power Amp, Switch
Description:
The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high–
speed power switching in inductive circuit where fall time is critical. This device is particularly suited
for line operated switchmode applications.
Applications:
D Switching Regulators
D Inverters
D Solenoid and Relay Drivers
D Motor Controls
D Deflection Circuits
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Total Power Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +275°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
500
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 100mA, IB = 0
Collector Cutoff Current
Emitter Cutoff Current
ICEV
VCEV = 800V, VEB(off) = 1.5V
–
–
0.25
mA
ICER
VCE = 800V, RBE = 50Ω, TC = +100°C
–
–
5.0
mA
IEBO
VBE = 6V, IC = 0
–
–
1.0
mA
hFE
VCE = 5V, IC = 5A
10
–
60
VCE(sat)
IC = 10A, IB = 2A
–
–
1.8
V
IC = 20A, IB = 6.7A
–
–
5.0
V
IC = 10A, IB = 2A
–
–
1.8
V
125
–
500
pF
–
0.02
0.1
µs
–
0.3
0.7
µs
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VBE(sat)
Dynamic Characteristics
Output Capacitance
Ccb
VCB = 10V, IE = 0, ftest = 1kHz
Switching Characteristics (Resistive Load)
Dealy Time
td
Rise Time
tr
Storage Time
ts
–
1.6
4.0
µs
Fall Time
tf
–
0.3
0.7
µs
VCC = 250V, IC = 10A, IB1 = 2A,
VBE(off) = 5V, tp = 10µs,
Duty Cycle ≤ 2%
Note 2. Pulse Test: Pulse Width = 300ms, Duty Cycle ≤ 2%.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.215 (5.45)
.040 (1.02)
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case