NTE387 Silicon NPN Transistor Power Amp, Switch Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain D Low Collector–Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70°C/W Note 1. Matched pairs are available upon request (NTE387MP). Matched pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 150 – – V OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 50mA, IB = 0, Note 2 ICEO VCE = 75V, IB = 0 – – 50 µA ICEX VCE = 180V, VEB(off) = 1.5V – – 10 µA VCE = 180V, VEB(off) = 1.5V, TC = +150°C – – 1.0 µA VBE = 6V, IC = 0 – – 100 µA IEBO Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 4V, IC = 1A 50 – – VCE = 4V, IC = 20A 30 – 120 VCE = 4V, IC = 50A 10 – – IC = 20A, IB = 2A – – 1 V IC = 50A, IB = 10A – – 3 V IC = 20A, IB = 2A – – 1.8 V IC = 50A, IB = 10A – – 3.5 V VCE = 4V, IC = 20A – – 1.8 V VCE = 10V, IC = 1A, ftest = 10MHz, Note 3 30 – – MHz VCB = 10V, IE = 0, ftest = 0.1MHz – – 600 pF ON Characteristics (Note 2) DC Current Gain hFE Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Base–Emitter ON Voltage VBE(on) Dynamic Characteristics Current Gain–Bandwidth Product fT Output Capacitance Cob Switching Characteristics Rise Time tr VCC = 80V, IC = 20A, IB1 = 2A, VBE(off) = 5V – – 0.35 µs Storage Time ts VCC = 80V, IC = 20A, IB1 = IB2 = 2A – – 0.80 µs Fall Time tf – – 0.25 µs Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 3. fT = (hfe) test .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case