NTE395 Silicon PNP Transistor Wide Band Linear Amplifier Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Power Dissipation (TA = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW Power Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 485°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 775°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Min Typ Max Unit VCB = 15V, IE = 0 – – 50 nA Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 30 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0 25 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 3 – – V Collector–Base Cutoff Current Symbol ICBO Test Conditions Static Forward Current Transfer Ratio h21E VCE = 10V, IC = 10mA, Note 1 20 – – Base–Emitter Voltage VBE VCE = 10V, IC = 10mA – 0.75 – V Knee Voltage VCEK IC = 20mA, Note 2 – 0.8 – V Transition Frequency fT VCE = 15V, IC = 10mA 1.4 2.3 – GHz Maximum Oscillation Frequency f VCE = 15V, IC = 10mA – 6.5 – GHz VCB = 15V, IE = 0, f = 1MHz – 1.1 – pF Output Capacitance C22b Note 1. Pulsed. Note 2. VCEK tested with IC = 100ma and IB = values for which IC = 110mA at VCE = 1V. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Power Gain Test Conditions Min Typ Max Unit VCE = 15V, IC = 10mA, f = 800MHz – 10 – dB Wide Band Power Gain GP f = 40 to 860MHz, RS = RL = 75Ω – 16 – dB Noise Figure NF VCE = 15V, IC = 3mA, f = 200MHz – 2.5 – dB VCE = 15V, IC = 10mA, f = 800MHz – 3.5 – dB VCE = 15V, IC = 10mA, f = 200MHz – 3.0 – dB VCE = 15V, IC = 10mA, f = 800MHz – 4.0 – dB .220 (5.58) Dia Max .185 (4.7) Dia Max .190 (4.82) .030 (.762) Max .500 (12.7) Min .018 (0.45) B E C 45° Case .040 (1.02)