NTE459 N–Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit –50 – – V VGS = –30V, VDS = 0 – – –0.1 nA VGS = –30V, VDS = 0, TA = +150°C – – –100 nA VGS(off) ID = 0.5nA, VDS = 15V – – –6 V VGS ID = 200µA, VDS = 15V –1 – –4 V IDSS VDS = 15V, VGS = 0, Note 1 2 – 10 mA |yfs| VDS = 15V, VGS = 0, f = 1kHz, Note 1 3000 – 6500 µmho VDS = 15V, VGS = 0, f = 100MHz 3000 – – µmho OFF Characteristics Gate–Source Breakdown Voltage Gate Reverse Current Gate–Source Cutoff Voltage Gate–Source Voltage V(BR)GSS IG = –1µA, VDS = 0 IGSS ON Characteristics Zero–Gate–Voltage Drain Current Small–Signal Characteristics Forward Transfer Admittance Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz, Note 1 – – 20 µmho Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1MHz – – 6 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1MHz – – 3 pF Note 1. Pulse Test: Pulse Width ≤ 100ms, Duty Cycle ≤ 10%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Functional Characteristics Noise Figure NF VDS = 15V, VGS = 0, RG = 1MΩ, f = 10Hz, BW = 5Hz – – 5 dB Equivalent Short–Circuit Input Noise Voltage en VDS = 15V, VGS = 0, f = 10Hz, BW = 5Hz – – 200 nV/Hz1/2 .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Drain Source Gate 45° Case .040 (1.02)