NTE472 Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz Description: The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment. Features: D Specified 12.5 Volt, 175MHz Characteristics: Output Power = 1.75 Watts Minimum Gain = 11.5dB Efficiency = 50% D Characterized through 225MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33A Total Device Dissipation (TC = +75°C , Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W Derate Above 75°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as a class B or C RF amplifier. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 25mA, IB = 0 16 – – V V(BR)CES IC = 25mA, VBE = 0 36 – – V V(BR)EBO IC = 0.5mA, IC = 0 3.5 – – V – – 0.3 mA OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ICEO VCE = 10V, IB = 0 Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE VCE = 5V, IC = 50mA 20 – 150 Cob VCB = 12V, IE = 0, f = 1MHz – – 15 pF GPE POUT = 1.75W, VCC = 12.5V, f = 175MHz 11.5 – – dB 50 – – % Dynamic Characteristics Output Capacitance Functional Test Common–Emitter Amplifier Power Gain η Collector Efficiency .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector/Case 45° .031 (.793)