NTE48 Silicon NPN Transistor Darlington, General Purpose Amplifier, High Current Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown V(BR)CES IC = 1mA, IB = 0, Note 1 Voltage Collector–Base Breakdown Voltage V(BR)CBO IC = 1.0µA, IE = 0 50 – – V 600 – – V Emitter–Base Breakdown Voltage 12 – – V V(BR)EBO IE = 10µA, IC = 0 Collector Cutoff Voltage ICBO VCB = 40V, IE = 0 – – 100 nA Emitter Cutoff Current IEBO VBE = 10V, IC = 0 – – 100 nA Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max IC = 200mA, VCE = 5V 25,000 – – IC = 1000mA, VCE = 5V 4,000 – 40,000 Unit ON Characteristics (Note 1) DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) IC = 1000mA, IB = 2mA – – 1.5 V Base–Emitter ON Voltage VBE(on) IC = 1000mA, VCE = 5V – – 2.0 V 100 – 1000 MHz – – 10 pF Small–Signal Characteristics Current Gain–Bandwidth Product Collector–Base Capacitance fT Ccb IC = 200mA, VCE = 5V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% .339 (8.62) Max Seating Plane C B .026 (.66) Dia Max .512 (13.0) Min E E B C .100 (2.54) .200 (5.08) Max .240 (6.09) Max