NTE NTE5442

NTE5442 thru NTE5448
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high–volume consumer phase–control applications such as motor speed, temperature,
and light controls, and for fast switching applications in ignition and starting systems, voltage regulators, vending machines, and lamp drivers.
Features:
D Small, Rugged Construction
D Practical Level Triggering and Holding Characteristics @ +25°C:
IGT = 7mA Typ
IHold = 6mA Typ
D Low “ON” Voltage: VTM = 1V Typ @ 5A @ +25°C
D High Surge Current Rating: ITSM = 80A
Absolute Maximum Ratings: (Note 1, TJ = +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), VDRM or VRRM
NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Non–Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), VRSM
NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
RMS On–State Current (All Conduction Angles), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Average On–State Current (TC = +73°C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A
Peak Non–Repetitive Surge Current, ITSM
(1/2 cycle, 60Hz preceeded and followed by rated current and voltage) . . . . . . . . . . . . . 80A
Circuit Fusing (TJ = –40° to +100°C, t = 1ms to 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A2sec
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Peak Forward Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Note 1. NTE5444 and NTE5446 are discontinued devices and are replaced by NTE5448.
Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied
concurrently with a negative potential on the anode. When checking forward or reverse
blocking capability, thyristor devices should not be tested with a constant current source in
a manner that the voltage applied exceeds the rated blocking voltage.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Peak Forward or Reverse
Blocking Current
IDRM,
IRRM
Gate Trigger Current
(Continuous DC)
IGT
Gate Trigger Voltage
(Continuous DC)
VGT
Test Conditions
VTM
Holding Current
IHold
Typ
Max
Unit
Rated VDRM or VRRM,
Gate Open
TJ = +25°C
–
–
10
µA
TJ= +100°C
–
–
2
mA
VD = 7V, RL = 100Ω
TC = +25°C
–
7
30
mA
TC = –40°C
–
–
60
mA
TC = +25°C
–
0.75
1.5
V
TC = –40°C
–
–
2.5
V
0.2
–
–
V
Pulse Width = 1ms to 2 ms, ITM = 5Apeak
Duty Cycle ≤ 2%
ITM = 15.7Apeak
–
1.0
1.5
V
–
–
2.0
V
VD = 7V, Gate Open
TC = +25°C
–
6
40
mA
TC = –40°C
–
–
70
mA
VD = 7V, RL = 100Ω
VD = Rated VDRM, RL = 100Ω, TJ = +100°C
Peak On–State Voltage
Min
Gate Controlled Turn–On Time
tgt
ITM = 5A, IGT = 20mA, VD = Rated VDRM
–
1
–
µs
Circuit Commutated Turn–Off
Time
tq
ITM = 5A, IR = 5A
–
15
–
µs
TJ= +100°C
–
20
–
µs
VD = Rated VDRM, Exponential Waveform,
TJ = +100°C, Gate Open
–
50
–
V/µs
Critical Rate–of–Rise of
Off–State Voltage
dv/dt
.530 (13.4) Max
.143 (3.65) Dia Thru
.668
(17.0)
Max
K
G
.655
(16.6)
Max
.166 (4.23)
Heat Sink Contact
Area (Bottom)
A (Heat Sink Area)
.150 (3.82) Max