NTE56004 thru NTE56010 TRIAC, 15 Amp The NTE56004 thru NTE56010 series of TRIACs are designed primarily for full–wave AC control applications, such as solid–state relays, motor controls, heating controls and power supplies; or wherever full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features: D Blocking Voltage from 200 to 800 Volts D All Diffused and Glass Passivated Junctions D Small, Rugged, TO220 package for Low Thermal Resistance, High Heat Dissipation and Durability D Gate Triggering specified in Four Quadrants Absolute Maximum Ratings: Peak Repetitive Off–State Voltage, (TJ = –40° to 125°C), VDRM NTE56004 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE56006 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE56008 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V On–State Current RMS (Full Cycle Sine Wave 50 to 60Hz,TC = +90°C), IT(RMS) . . . . . . . . . . . 15A Circuit Fusing (t = 8.3ms) I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93A2s Peak Surge Current (One Full Cycle, 60Hz, TC = +80°C), ITSM Preceded and followed by rated current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A Peak Gate Power (TC = +80°C, Pulse Width = 2µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power (TC = +80°C, t = 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W Electrical Characteristics (TC = 25°C, and either polarity of MT2 to MT1 Voltage, unless otherwise noted) Characteristics Symbol Peak Forward or Reverse Blocking Current TJ=25°C (Rated VDRM, or VRRM, Gate open) TJ=125°C IDRM, IRRM Peak On–State Voltage (ITM = 21 A Peak; Pulse Width = 1 to 2ms, Duty Cycle ≤ 2%) VTM Gate Trigger Current (Continuous dc) (VD = 12Vdc, RL = 100 Ohms) MT2(+) G(+), MT2(+) G(–), MT2(–) G(–) MT2(–), G(+) IGT Gate Trigger Voltage (Continuous dc) (VD = 12Vdc, RL = 100 Ohms) MT2(+) G(+), MT2(+) G(–) MT2(–) G(–) MT2(–) G(+) (VD = Rated VDRM, RL = 10k Ohms, TJ = 110°C) MT2(+) G(+), MT2(–) G(–), MT2(+) G(–) MT2(–) G(+) VGT Min Typ Max Unit – – – – 10 2 µA mA – 1.3 1.6 Volts mA – – – – 50 75 Volts – – – 0.9 1.1 1.4 2 2 2.5 0.2 0.2 – – – – Holding Current (Either Direction) (VD = 12Vdc, IT = 200mA, Gate Open) IH – 6 40 mA Turn–On Time (VD = Rated VDRM, ITM = 17A) (IGT = 120mA, Rise Time = 0.1µs, Pulse Width = 2µs) tgt – 1.5 – µs dv/dt(c) – 5 – V/µs Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 8A/ms, Gate Unenergized, TC = 80°C) .420 (10.67) Max .110 (2.79) MT2 .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT1 .100 (2.54) Gate MT2