NTE592 Silicon Diode, General Purpose, High Voltage Description: The NTE592 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for switching and general purposes applications. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Non–Repetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 200mA DC Forward Current (TA ≤ +25°C, Note 2), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mA Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W Thermal Resistance, Soldering Points–to–Ambient, RthSA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90K/W Note 1. Measured under pulse conditions: Pulse Time = tp ≤ 0.3ms. Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Forward Voltage Reverse Breakdown Voltage Reverse Current Symbol VF V(BR)R IR Test Conditions Min Typ Max Unit IF = 100mA – – 1.00 V IF = 200mA – – 1.25 V 250 – – V VR = 200V – – 100 nA VR = 200V, TJ = +150°C – – 100 µA IR = 100µA, Note 1 & 3 Differential Resistance rdiff IF = 10mA – 5 – Ω Diode Capacitance Cd VR = 0, f = 1MHz – – 5 pF Reverse Recovery Time (When switched from IF = 30mA to IR = 30mA trr measured at IR = 3mA, RL = 100Ω – – 50 ns Note 1. Measured under pulse conditions: Pulse Time = tp ≤ 0.3ms. Note 3. At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V. .016 (0.48) K A .098 (2.5) Max N.C. .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)