NTE69 Silicon NPN Transistor UHF/VHF Amplifier Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C Operating Junction Temperature Tange, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W Note 1 RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 2 25 – – V Colletor–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 35 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 3 – – V ON Characteristics DC Current Gain hFE VCE = 4V, IC = 4mA 25 60 – Collector–Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA – 200 350 mV Base–Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 1mA – 750 950 mV 750 1100 – MHz Small–Signal Characteristics Current Gain–Bandwidth Product fT VCE = 12V, IC = 4mA, f = 100MHz Output Capaciatnce Cobo VCB = 10V, IE = 0, f = 1MHz – 0.8 1.0 pF Collector–Base Time Constant rbCc VCE = 12V, IE = 4mA, f = 31.8MHz – – 9.5 ps Note 2 Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min B E C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max